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IRLR120ATF-VB Product details
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Product Introduction
**IRLR120ATF-VB** is a high-performance N-Channel MOSFET in TO252 package. This MOSFET adopts Trench technology, has low on-resistance and high current carrying capacity, and is very suitable for high-efficiency switching and amplification applications. Its rated drain-source voltage (V_DS) is 100V, and the gate-source voltage (V_GS) is ±20V, which can provide good conduction characteristics at a lower gate drive voltage. With an on-resistance of 114mΩ (R_DS(ON)@V_GS=10V) and a maximum drain current (I_D) of 15A, it is suitable for circuit designs that require high current and high voltage resistance.
**IRLR120ATF-VB** is a high-performance N-Channel MOSFET in TO252 package. This MOSFET adopts Trench technology, has low on-resistance and high current carrying capacity, and is very suitable for high-efficiency switching and amplification applications. Its rated drain-source voltage (V_DS) is 100V, and the gate-source voltage (V_GS) is ±20V, which can provide good conduction characteristics at a lower gate drive voltage. With an on-resistance of 114mΩ (R_DS(ON)@V_GS=10V) and a maximum drain current (I_D) of 15A, it is suitable for circuit designs that require high current and high voltage resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (V_DS)**: 100V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(ON))**: 114mΩ @ V_GS=10V
- **Maximum drain current (I_D)**: 15A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (V_DS)**: 100V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(ON))**: 114mΩ @ V_GS=10V
- **Maximum drain current (I_D)**: 15A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
The features of the **IRLR120ATF-VB** make it suitable for a variety of applications and modules:
1. **Power Management**:
- This MOSFET provides efficient current control in power switches, voltage regulator modules (VRMs). Its low on-resistance and high current carrying capability make it ideal for use in DC-DC converters, power supply modules, and other power management applications.
2. **Power Switch**:
- In power switching applications such as motor drives, load switches, etc., this MOSFET can effectively control high current loads. Its high withstand voltage and high current characteristics make it suitable for power switching needs in various industrial and consumer electronics products.
3. **Automotive Electronics**:
- In automotive electronic systems such as power windows, seat adjusters, and battery management systems, the IRLR120ATF-VB provides reliable switching and protection functions. Its high withstand voltage and good temperature characteristics can cope with the harsh conditions of the automotive environment.
4. **Consumer Electronics**:
- In consumer electronics, such as portable devices and home appliances, the low on-resistance of MOSFET can effectively improve energy efficiency and reduce energy loss. Especially in low-power electronic devices, this MOSFET can effectively improve the overall performance and reliability of the device.
The features of the **IRLR120ATF-VB** make it suitable for a variety of applications and modules:
1. **Power Management**:
- This MOSFET provides efficient current control in power switches, voltage regulator modules (VRMs). Its low on-resistance and high current carrying capability make it ideal for use in DC-DC converters, power supply modules, and other power management applications.
2. **Power Switch**:
- In power switching applications such as motor drives, load switches, etc., this MOSFET can effectively control high current loads. Its high withstand voltage and high current characteristics make it suitable for power switching needs in various industrial and consumer electronics products.
3. **Automotive Electronics**:
- In automotive electronic systems such as power windows, seat adjusters, and battery management systems, the IRLR120ATF-VB provides reliable switching and protection functions. Its high withstand voltage and good temperature characteristics can cope with the harsh conditions of the automotive environment.
4. **Consumer Electronics**:
- In consumer electronics, such as portable devices and home appliances, the low on-resistance of MOSFET can effectively improve energy efficiency and reduce energy loss. Especially in low-power electronic devices, this MOSFET can effectively improve the overall performance and reliability of the device.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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