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IRLMS6702TRPBF-VB Product details
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1. Product Introduction (IRLMS6702TRPBF-VB)
The IRLMS6702TRPBF-VB is a high-performance single P-channel power MOSFET in a SOT23-6 package. The MOSFET has a maximum drain-source voltage (VDS) of -30V, a gate-source voltage (VGS) range of ±20V, and a turn-on voltage (Vth) of -1.7V. The on-resistance of the IRLMS6702TRPBF-VB is 54mΩ at a gate voltage of 4.5V and 49mΩ at a gate voltage of 10V, and can support a drain current of up to -4.8A. Using Trench technology, this MOSFET provides excellent switching performance and low conduction losses, making it ideal for space-constrained applications.
The IRLMS6702TRPBF-VB is a high-performance single P-channel power MOSFET in a SOT23-6 package. The MOSFET has a maximum drain-source voltage (VDS) of -30V, a gate-source voltage (VGS) range of ±20V, and a turn-on voltage (Vth) of -1.7V. The on-resistance of the IRLMS6702TRPBF-VB is 54mΩ at a gate voltage of 4.5V and 49mΩ at a gate voltage of 10V, and can support a drain current of up to -4.8A. Using Trench technology, this MOSFET provides excellent switching performance and low conduction losses, making it ideal for space-constrained applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
II. Detailed parameter description
| Parameter| Value|
|---------------------|-------------------------------|
| **Model** | IRLMS6702TRPBF-VB |
| **Package type** | SOT23-6 |
| **Configuration** | Single P-channel|
| **Drain-source voltage (VDS)** | -30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throughput voltage (Vth)** | -1.7V |
| **On-resistance (RDS(ON))** | 54mΩ @ VGS=4.5V |
| | 49mΩ @ VGS=10V |
| **Maximum drain current (ID)** | -4.8A |
| **Technology** | Trench |
| **Operating temperature range** | -55°C to 175°C |
| **Maximum power dissipation** | 1.25W (heatsinking in SOT23-6 package) |
| **Breakdown voltage** | -30V |
| **Switching speed** | High-speed switching for high-frequency applications |
| Parameter| Value|
|---------------------|-------------------------------|
| **Model** | IRLMS6702TRPBF-VB |
| **Package type** | SOT23-6 |
| **Configuration** | Single P-channel|
| **Drain-source voltage (VDS)** | -30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throughput voltage (Vth)** | -1.7V |
| **On-resistance (RDS(ON))** | 54mΩ @ VGS=4.5V |
| | 49mΩ @ VGS=10V |
| **Maximum drain current (ID)** | -4.8A |
| **Technology** | Trench |
| **Operating temperature range** | -55°C to 175°C |
| **Maximum power dissipation** | 1.25W (heatsinking in SOT23-6 package) |
| **Breakdown voltage** | -30V |
| **Switching speed** | High-speed switching for high-frequency applications |
Domain and module applications：
III. Application fields and module examples
1. **Battery management system**: The low on-resistance and high current handling capability of the IRLMS6702TRPBF-VB make it ideal for load switches and battery protection modules in battery management systems. Its small SOT23-6 package helps achieve efficient switch control in space-constrained designs.
2. **DC-DC converter**: In DC-DC converters, especially where load switching is required, this MOSFET can provide efficient switching performance and low conduction losses, thereby improving the overall efficiency and stability of the converter.
3. **Power switch applications**: The IRLMS6702TRPBF-VB can be used in a variety of power switch applications, such as load switching and power management. Its low turn-on voltage and low on-resistance enable it to effectively control current flow, improving the energy efficiency and reliability of the system.
4. **Load Switch**: In consumer electronic devices, such as portable devices and smart home products, this MOSFET can be used to implement efficient load switching functions to help manage power distribution and protection of the device.
The IRLMS6702TRPBF-VB is suitable for applications in battery management systems, DC-DC converters, power switching applications and load switches due to its low voltage, low conduction loss and compact package.
1. **Battery management system**: The low on-resistance and high current handling capability of the IRLMS6702TRPBF-VB make it ideal for load switches and battery protection modules in battery management systems. Its small SOT23-6 package helps achieve efficient switch control in space-constrained designs.
2. **DC-DC converter**: In DC-DC converters, especially where load switching is required, this MOSFET can provide efficient switching performance and low conduction losses, thereby improving the overall efficiency and stability of the converter.
3. **Power switch applications**: The IRLMS6702TRPBF-VB can be used in a variety of power switch applications, such as load switching and power management. Its low turn-on voltage and low on-resistance enable it to effectively control current flow, improving the energy efficiency and reliability of the system.
4. **Load Switch**: In consumer electronic devices, such as portable devices and smart home products, this MOSFET can be used to implement efficient load switching functions to help manage power distribution and protection of the device.
The IRLMS6702TRPBF-VB is suitable for applications in battery management systems, DC-DC converters, power switching applications and load switches due to its low voltage, low conduction loss and compact package.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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