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IRLMS4502TRPBF-VB Product details

Product introduction:

1. Product Introduction

**IRLMS4502TRPBF-VB** is a high-performance P-channel MOSFET in a SOT23-6 package, designed for low-voltage and high-switching frequency applications. Its maximum drain-source voltage (VDS) is -30V, the gate drive voltage range is ±20V, and the threshold voltage (Vth) is -1.7V. The on-resistance of this MOSFET is 54mΩ at a gate voltage of 4.5V, which drops to 49mΩ at 10V, supporting a maximum drain current of -4.8A. The IRLMS4502TRPBF-VB uses Trench technology, has low on-resistance and good switching performance, and is particularly suitable for circuit designs that require high-efficiency switching and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Single-P -30V -1.7V -4.8A 49mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Single-P -30V -1.7V -4.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Single-P -30V -1.7V -4.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Single-P
II. Detailed parameter description

- **Device model**: IRLMS4502TRPBF-VB
- **Package type**: SOT23-6
- **Polarity**: P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Continuous drain current (ID)**: -4.8A
- **Technology**: Trench
- **Maximum power dissipation**: 1.25W (depending on heat dissipation conditions)
- **Maximum junction temperature (Tj)**: 175°C
- **Gate charge (Qg)**: 10nC
- **Switching delay time**:
- Rise time (tr): 25ns
- Fall time (tf): 22ns

Domain and module applications:

3. Applicable fields and modules

**IRLMS4502TRPBF-VB** is widely used in various low-voltage and high-switching-frequency electronic devices and power management systems due to its low on-resistance and compact SOT23-6 package:

1. **Battery management system**: In battery protection circuits and battery charge and discharge management, IRLMS4502TRPBF-VB can effectively control the charging and discharging process of the battery. Its low on-resistance and small package make it play an important role in compact battery management systems, helping to improve energy efficiency and extend battery life.

2. **Switching power supply (SMPS)**: The low on-resistance and good switching performance of this MOSFET make it suitable for use in switch-mode power supplies, especially applications that require high switching frequencies. IRLMS4502TRPBF-VB can provide stable performance in a high-frequency switching environment and optimize power conversion efficiency.

3. **Load Switch**: In various load switch applications, the IRLMS4502TRPBF-VB can efficiently control the load current, reduce power consumption and heat generation. It is suitable for low-voltage load switching, such as power management circuits in small home appliances and consumer electronic devices.

4. **Small Motor Drive**: In small motor drive circuits, the high switching speed and low on-resistance of the IRLMS4502TRPBF-VB enable it to effectively control the switching operation of the motor, suitable for small motor drive applications such as toys and power tools.

5. **Communication Equipment**: In communication equipment, the compact package and high efficiency of this MOSFET make it suitable for power switch and load control circuits in communication modules. It can provide reliable switching performance in occasions requiring miniaturization and high efficiency.

In summary, the high performance, low on-resistance and small package of IRLMS4502TRPBF-VB make it excellent in a variety of applications such as battery management, switching power supplies, load switches, small motor drives and communication equipment. It can meet the design requirements of high switching speed and low power consumption, providing reliable solutions for electronic products in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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