IRLMS2002TR-VB Product details
Product introduction:
IRLMS2002TR-VB is a high-performance single-N-Channel MOSFET in SOT23-6 package. Designed for low to medium voltage applications, this MOSFET has a drain-source voltage (VDS) of 30V and a drain current (ID) of up to 6A. Its gate threshold voltage (Vth) is 1.7V, and its on-resistance (RDS(ON)) is 27mΩ and 26mΩ at 4.5V and 10V gate-source voltages, respectively. Using Trench technology, IRLMS2002TR-VB provides excellent switching performance and low power consumption, suitable for space-constrained applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | 26mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
- **Package type**: SOT23-6
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 27mΩ @ VGS=4.5V
- 26mΩ @ VGS=10V
- **Drain current (ID)**: 6A
- **Technology**: Trench technology
- **Power consumption**: Suitable for low power applications
- **Switching speed**: Suitable for medium to high frequency switching applications
- **Thermal management**: SOT23-6 package provides good heat dissipation performance, suitable for high-density circuit boards
Domain and module applications:
1. **Portable Electronic Devices**: The IRLMS2002TR-VB performs well in portable electronic devices such as smartphones, tablets, and portable game consoles. Due to its compact SOT23-6 package and low on-resistance, it can effectively provide efficient switching control and power management on space-limited circuit boards.
2. **DC-DC Converters**: In small DC-DC converters, this MOSFET is able to provide efficient switching performance and low power consumption. Its low on-resistance and moderate current handling capability make it suitable for power management and voltage regulation, especially in applications that require high efficiency and compact design.
3. **LED Drive Circuit**: The IRLMS2002TR-VB is also suitable for drive circuits in LED lighting systems. Its low RDS(ON) characteristics and high switching speed help achieve efficient LED control, ensuring stable brightness output and extending the life of the LED.
4. **Communication Equipment**: In communication equipment such as routers and switches, this MOSFET can be used for switching circuits and power distribution. Its compact package and good thermal management performance make it suitable for high-density circuit boards, providing reliable power control and switching operations.
In summary, IRLMS2002TR-VB is widely used in portable electronic devices, DC-DC converters, LED drive circuits, and communication equipment with its small package, high switching speed, and low power consumption, meeting the needs of efficient, compact, and reliable power management and switching control.
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