IRLML6802TRPBF-VB Product details
Product introduction:
The IRLML6802TRPBF-VB is a high-performance P-channel MOSFET designed in a compact SOT-23-6 package, optimized for low-voltage, high-efficiency applications. It has a maximum drain-source voltage (VDS) of -30V and supports a gate drive voltage (VGS) of ±20V. The threshold voltage (Vth) of this MOSFET is -1.7V, ensuring that it can be effectively turned on at a lower gate voltage. The on-resistance (RDS(ON)) of the IRLML6802TRPBF-VB is 54mΩ at a gate voltage of 4.5V and 49mΩ at a gate voltage of 10V, supporting a maximum continuous drain current (ID) of -4.8A. The Trench technology it uses ensures excellent switching performance and low power consumption, making it suitable for a variety of applications requiring efficient power control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
- **Package type**: SOT-23-6
- **Channel configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: -4.8A
- **Power dissipation (PD)**: 1.25W (estimated, depends on heat dissipation conditions)
- **Technology type**: Trench technology
- **Switching frequency**: Suitable for high-frequency switching applications
- **Junction temperature range**: -55°C to +150°C
Domain and module applications:
1. **Battery management system**
The low on-resistance and moderate current capability of IRLML6802TRPBF-VB make it very suitable for use in battery management systems. It can effectively control the battery charging and discharging process, improving the efficiency and safety of the overall battery system.
2. **Portable devices**
Due to its compact SOT-23-6 package, IRLML6802TRPBF-VB is very suitable for portable electronic devices such as smartphones, tablets and portable battery packs. It can provide efficient power switching functions in a limited space, supporting power management and battery protection.
3. **LED drive circuit**
In the LED drive circuit, the low RDS(ON) of IRLML6802TRPBF-VB enables it to effectively drive LEDs while maintaining low power consumption. It is suitable for a variety of LED lighting applications, including backlighting and decorative lamps.
4. **Power Management**
This MOSFET can be used as a key component of load switches, power converters, and regulators in power management systems. Its efficient switching performance and low on-resistance help optimize power conversion efficiency and reduce power losses.
5. **Automotive Electronics**
In automotive electronic systems, the IRLML6802TRPBF-VB can be used in a variety of power control applications such as on-board lighting, window control, and power switches. Its stable performance and efficient current handling capabilities help improve the reliability of automotive electronic systems.
The IRLML6802TRPBF-VB's efficient switching characteristics, small package, and low power consumption enable it to excel in multiple fields, especially in scenarios that require efficient and reliable power control.
Technical support:
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