Product introduction：
1. Product Introduction
**IRLM2502TR-VB** is a high-performance N-channel MOSFET in a compact SOT23-3 package, designed for low-voltage and high-switching frequency applications. The maximum drain-source voltage (VDS) of this MOSFET is 20V, and the gate drive voltage range is ±12V. Its threshold voltage (Vth) range is 0.5V to 1.5V, and it can effectively turn on at low gate voltages. At a gate drive voltage of 2.5V, the on-resistance is 42mΩ, and it drops to 28mΩ at 4.5V, supporting a maximum drain current of 6A. IRLM2502TR-VB uses Trench technology, which has low on-resistance and good switching performance, and is very suitable for applications requiring high switching speeds and low power consumption.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
20V |
12（±V） |
0.5~1.5V |
6A |
42mΩ |
|
|
|
II. Detailed parameter description
- **Device model**: IRLM2502TR-VB
- **Package type**: SOT23-3
- **Polarity**: N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 42mΩ @ VGS = 2.5V
- 28mΩ @ VGS = 4.5V
- **Continuous drain current (ID)**: 6A
- **Technology**: Trench
- **Maximum power dissipation**: 1.6W (depending on heat dissipation conditions)
- **Maximum junction temperature (Tj)**: 175°C
- **Gate charge (Qg)**: 13nC
- **Switching delay time**:
- Rise time (tr): 30ns
- Fall time (tf): 25ns
Domain and module applications：
3. Application Fields and Modules
**IRLM2502TR-VB** is widely used in various electronic devices and power management systems due to its low on-resistance and high switching speed:
1. **Consumer Electronics**: Due to its compact SOT23-3 package and low on-resistance, the IRLM2502TR-VB is ideal for small switching circuits in consumer electronics, such as smartphones, tablets, and wearable devices. Its high switching speed and low power consumption can improve the overall energy efficiency and performance of the device.
2. **Battery Management System**: In battery-powered devices, such as battery protection boards and charging management systems, the IRLM2502TR-VB can effectively control the battery charging and discharging process. Low on-resistance helps reduce power consumption and heat generation, while high switching frequency supports efficient battery management.
3. **Switching Mode Power Supply (SMPS)**: The low on-resistance of this MOSFET makes it suitable for use in switch mode power supplies, especially applications that require high switching frequencies. IRLM2502TR-VB can provide stable performance in high-frequency switching environments and improve power conversion efficiency.
4. **LED driver circuit**: In LED driver applications, the high switching speed and low on-resistance of IRLM2502TR-VB ensure stable LED brightness and extend the service life of LEDs. It can effectively handle high switching frequencies and high current requirements in LED driver circuits.
5. **Communication equipment**: In various communication equipment, IRLM2502TR-VB can be used as an efficient switching element to ensure the stability and reliability of data transmission. Its low on-resistance and small package make it suitable for communication modules that require miniaturization and high efficiency.
In short, the high switching speed, low on-resistance and compact package of IRLM2502TR-VB make it excellent in a variety of applications such as consumer electronics, battery management, power systems, LED drivers and communication equipment. It can meet the requirements of high efficiency and compact design, providing a reliable solution for electronic design in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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