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IRLL024ZTRPBF-VB Product details
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IRLL024ZTRPBF-VB MOSFET Product Introduction
IRLL024ZTRPBF-VB is a high-efficiency single N-channel power MOSFET in a SOT223 package, designed to handle medium voltage and current applications. Its drain-source voltage (VDS) is 60V, the gate-source voltage (VGS) is rated at ±20V, and the maximum drain current is 7A. The device uses Trench technology and has a low on-resistance (RDS(ON)), which is 33mΩ at VGS of 4.5V and 28mΩ at VGS of 10V. Its compact package and low on-resistance characteristics make it an ideal choice for low-power applications.
IRLL024ZTRPBF-VB is a high-efficiency single N-channel power MOSFET in a SOT223 package, designed to handle medium voltage and current applications. Its drain-source voltage (VDS) is 60V, the gate-source voltage (VGS) is rated at ±20V, and the maximum drain current is 7A. The device uses Trench technology and has a low on-resistance (RDS(ON)), which is 33mΩ at VGS of 4.5V and 28mΩ at VGS of 10V. Its compact package and low on-resistance characteristics make it an ideal choice for low-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
IRLL024ZTRPBF-VB MOSFET Detailed parameter description
- **Device type**: N-channel MOSFET
- **Package**: SOT223
- **Configuration**: Single channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Through voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 33mΩ @ VGS = 4.5V
- 28mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology**: Trench technology
- **Power consumption**: Low power consumption, suitable for high-efficiency switching applications
- **Thermal resistance**: Package design optimizes thermal performance, suitable for compact circuit design
- **Device type**: N-channel MOSFET
- **Package**: SOT223
- **Configuration**: Single channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Through voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 33mΩ @ VGS = 4.5V
- 28mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology**: Trench technology
- **Power consumption**: Low power consumption, suitable for high-efficiency switching applications
- **Thermal resistance**: Package design optimizes thermal performance, suitable for compact circuit design
Domain and module applications：
Applications and modules
1. **Power management system**: IRLL024ZTRPBF-VB is suitable for portable power management systems and battery-powered devices, such as mobile phone chargers, battery management modules, etc. Its low on-resistance and medium current handling capability can improve power efficiency and extend the battery life of the device.
2. **DC-DC converter**: In DC-DC converters, the fast switching characteristics of this MOSFET help improve energy efficiency. It is suitable for small switching power supplies and voltage regulators, especially in applications that require low power consumption and high efficiency.
3. **Low power motor drive**: IRLL024ZTRPBF-VB can be used for small motor drive applications, such as fans, pumps and other equipment. Its low on-resistance and stable current handling capability make it suitable for these medium current demanding devices.
4. **Automotive electronics**: In automotive electronic devices, such as on-board electronic control units (ECUs) or headlight driver modules, the MOSFET's efficient current control characteristics ensure system reliability and low power consumption, making it suitable for control and management of auxiliary systems.
5. **LED driver**: In LED driver applications, the IRLL024ZTRPBF-VB provides stable current output and low conduction loss, making it suitable for home and commercial LED lighting systems to improve overall lighting efficiency and energy saving.
1. **Power management system**: IRLL024ZTRPBF-VB is suitable for portable power management systems and battery-powered devices, such as mobile phone chargers, battery management modules, etc. Its low on-resistance and medium current handling capability can improve power efficiency and extend the battery life of the device.
2. **DC-DC converter**: In DC-DC converters, the fast switching characteristics of this MOSFET help improve energy efficiency. It is suitable for small switching power supplies and voltage regulators, especially in applications that require low power consumption and high efficiency.
3. **Low power motor drive**: IRLL024ZTRPBF-VB can be used for small motor drive applications, such as fans, pumps and other equipment. Its low on-resistance and stable current handling capability make it suitable for these medium current demanding devices.
4. **Automotive electronics**: In automotive electronic devices, such as on-board electronic control units (ECUs) or headlight driver modules, the MOSFET's efficient current control characteristics ensure system reliability and low power consumption, making it suitable for control and management of auxiliary systems.
5. **LED driver**: In LED driver applications, the IRLL024ZTRPBF-VB provides stable current output and low conduction loss, making it suitable for home and commercial LED lighting systems to improve overall lighting efficiency and energy saving.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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