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IRLL024NTR-VB Product details
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1. Product Introduction
**IRLL024NTR-VB** is an N-channel MOSFET in a SOT223 package, designed for compact, high-efficiency circuits. The device features a drain-source voltage (VDS) of 60V, a gate drive voltage (VGS) of ±20V, and low on-resistance and high switching speed due to Trench technology. At a gate drive voltage of 4.5V, its on-resistance is 33mΩ, which drops to 28mΩ at 10V, and the drain current (ID) is up to 7A. Its small package and powerful performance make the device particularly suitable for applications with space constraints but high current requirements, such as load switches, power management, and switching power supplies in consumer electronic devices.
**IRLL024NTR-VB** is an N-channel MOSFET in a SOT223 package, designed for compact, high-efficiency circuits. The device features a drain-source voltage (VDS) of 60V, a gate drive voltage (VGS) of ±20V, and low on-resistance and high switching speed due to Trench technology. At a gate drive voltage of 4.5V, its on-resistance is 33mΩ, which drops to 28mΩ at 10V, and the drain current (ID) is up to 7A. Its small package and powerful performance make the device particularly suitable for applications with space constraints but high current requirements, such as load switches, power management, and switching power supplies in consumer electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
II. Detailed parameter description
- **Device model**: IRLL024NTR-VB
- **Package type**: SOT223
- **Polarity**: N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 33mΩ @ VGS = 4.5V
- 28mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 7A
- **Maximum pulsed drain current**: 28A
- **Technology**: Trench
- **Power dissipation**: 3W (at lower package thermal resistance)
- **Maximum junction temperature (Tj)**: 175°C
- **Gate charge (Qg)**: 15nC
- **Switching delay time**:
- Rise time (tr): 25ns
- Fall time (tf): 18ns
- **Device model**: IRLL024NTR-VB
- **Package type**: SOT223
- **Polarity**: N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 33mΩ @ VGS = 4.5V
- 28mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 7A
- **Maximum pulsed drain current**: 28A
- **Technology**: Trench
- **Power dissipation**: 3W (at lower package thermal resistance)
- **Maximum junction temperature (Tj)**: 175°C
- **Gate charge (Qg)**: 15nC
- **Switching delay time**:
- Rise time (tr): 25ns
- Fall time (tf): 18ns
Domain and module applications：
3. Applicable fields and modules
**IRLL024NTR-VB** is widely used in multiple fields and modules due to its low on-resistance, compact package and good switching performance:
1. **Load switch**: The low on-resistance and small package size of this MOSFET make it excellent in load switch applications in power management modules. Especially in battery-powered devices, the device can efficiently switch the power path, reduce power loss and extend the device life.
2. **Switching power supply (SMPS)**: In a switching mode power supply, the IRLL024NTR-VB can effectively reduce heat generation and improve power efficiency in a compact space with its fast switching speed and low on-resistance. This makes it suitable for low-power switching power supplies in consumer electronics.
3. **Motor drive circuit**: Although the current carrying capacity of this device is not as high as that of higher power MOSFETs, its 7A current capability is still sufficient for some small motor drive applications, especially in circuits with limited space to provide efficient current switching and control.
4. **Consumer Electronic Devices**: The small size and high performance of this device are very suitable for various control modules in consumer electronics, such as charging management modules used in mobile devices such as mobile phones and tablets. These devices often require efficient power management and fast switching capabilities, and the IRLL024NTR-VB can meet these requirements.
5. **Power Protection Circuit**: The IRLL024NTR-VB can also be used in power protection circuits. Through its high current handling capability and fast response speed, it can quickly protect the circuit in overcurrent or short circuit conditions to ensure the reliability and safety of the system.
In summary, the IRLL024NTR-VB has good current carrying capacity, low on-resistance and compact packaging. It is suitable for a variety of applications such as load switches, switching power supplies, motor drives, etc., especially in situations where space is limited but power efficiency is required.
**IRLL024NTR-VB** is widely used in multiple fields and modules due to its low on-resistance, compact package and good switching performance:
1. **Load switch**: The low on-resistance and small package size of this MOSFET make it excellent in load switch applications in power management modules. Especially in battery-powered devices, the device can efficiently switch the power path, reduce power loss and extend the device life.
2. **Switching power supply (SMPS)**: In a switching mode power supply, the IRLL024NTR-VB can effectively reduce heat generation and improve power efficiency in a compact space with its fast switching speed and low on-resistance. This makes it suitable for low-power switching power supplies in consumer electronics.
3. **Motor drive circuit**: Although the current carrying capacity of this device is not as high as that of higher power MOSFETs, its 7A current capability is still sufficient for some small motor drive applications, especially in circuits with limited space to provide efficient current switching and control.
4. **Consumer Electronic Devices**: The small size and high performance of this device are very suitable for various control modules in consumer electronics, such as charging management modules used in mobile devices such as mobile phones and tablets. These devices often require efficient power management and fast switching capabilities, and the IRLL024NTR-VB can meet these requirements.
5. **Power Protection Circuit**: The IRLL024NTR-VB can also be used in power protection circuits. Through its high current handling capability and fast response speed, it can quickly protect the circuit in overcurrent or short circuit conditions to ensure the reliability and safety of the system.
In summary, the IRLL024NTR-VB has good current carrying capacity, low on-resistance and compact packaging. It is suitable for a variety of applications such as load switches, switching power supplies, motor drives, etc., especially in situations where space is limited but power efficiency is required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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