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IRLL014TR-VB Product details

Product introduction:

IRLL014TR-VB MOSFET Product Introduction

IRLL014TR-VB is a single N-channel MOSFET in a compact SOT223 package designed for low to medium power applications. The device has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a gate threshold voltage (Vth) of 1.7V. Its on-resistance is 85mΩ@VGS=4.5V and 76mΩ@VGS=10V, respectively, and supports a maximum drain current (ID) of 4.5A. IRLL014TR-VB uses advanced Trench technology, providing good conduction performance and low loss, suitable for a variety of low-power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT223 Single-N 60V 1.7V 4.5A 76mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT223 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT223 Single-N 60V 1.7V 4.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT223 Single-N 60V 1.7V 4.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT223 Single-N
IRLL014TR-VB MOSFET Detailed parameter description

- **Package type**: SOT223
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 85mΩ @ VGS=4.5V;76mΩ @ VGS=10V
- **Drain current (ID)**: 4.5A
- **Technology type**: Trench technology
- **Maximum power dissipation (PD)**: 2W
- **Operating temperature range**: -55°C to 150°C
- **Package pins**: Four pins (Drain, Gate, Source, Source)

Domain and module applications:

Applications and module examples

1. **Low-power switching circuits**
- IRLL014TR-VB is ideal for use in a variety of low-power switching circuits, such as switching power supplies and control circuits for small home appliances. Its compact SOT223 package makes it suitable for designs with limited space, and has low conduction losses, which helps improve overall system efficiency.

2. **Load switching and protection circuits**
- This MOSFET can be used in load switching and current protection applications, especially when medium currents need to be effectively managed, such as overcurrent protection modules in battery management systems or portable electronic devices. Its 4.5A current capability and low RDS(ON) help ensure stable system operation.

3. **DC-DC converter**
- IRLL014TR-VB is suitable for use in low-power DC-DC converter circuits, especially in applications where voltage conversion within 60V is required. Its fast switching characteristics and low on-resistance enable it to improve conversion efficiency and is widely used in automotive electronics, industrial control and other fields.

4. **Electronic Load and Signal Amplification**
- In the signal amplification circuit, IRLL014TR-VB provides good amplification efficiency and is suitable for low-power amplifier design. In addition, it can also be used as a switching device in electronic load applications to ensure stability and response speed in the system.

IRLL014TR-VB is a compact MOSFET that is suitable for a variety of medium and low power applications. It is widely used in small power management, DC-DC converters, load switches and other fields, with high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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