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IRLIZ34GPBF-VB Product details

Product introduction:

1. Product Introduction (IRLIZ34GPBF-VB)

IRLIZ34GPBF-VB is a high-performance single N-channel power MOSFET in a TO220F package, designed for medium voltage applications. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, this MOSFET performs well in high voltage and high current applications. Its turn-on voltage (Vth) is 1.7V, providing low gate drive requirements. The on-resistance of the IRLIZ34GPBF-VB is 27mΩ at a gate voltage of 10V, and it can handle a drain current of up to 45A. The MOSFET uses Trench technology and has excellent electrical performance, making it particularly suitable for medium voltage applications that require high switching efficiency and low conduction losses.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 60V 1.7V 45A 27mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 60V 1.7V 45A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 60V 1.7V 45A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
II. Detailed parameter description

| Parameter| Value|
|---------------------|-------------------------------|
| **Model** | IRLIZ34GPBF-VB |
| **Package type** | TO220F |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throughput voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 27mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 45A |
| **Technology** | Trench |
| **Operating temperature range** | -55°C to 175°C |
| **Maximum power consumption** | 125W |
| **Breakdown voltage** | 60V |
| **Switching speed** | High-speed switching, suitable for high-frequency applications|

Domain and module applications:

III. Application fields and module examples

1. **Power management module**: The low on-resistance and medium drain-source voltage of IRLIZ34GPBF-VB make it very suitable for use in power management modules, especially in applications that require high performance and low power consumption. In these modules, MOSFETs are responsible for handling power switching and voltage regulation tasks to ensure system stability and efficiency.

2. **DC-DC converter**: This MOSFET can efficiently convert electrical energy in DC-DC converters. Its low on-resistance and high switching efficiency enable it to reduce energy losses and improve the overall efficiency of the converter, making it suitable for applications that require high-performance power conversion.

3. **Automotive electronic system**: In automotive electronic systems, especially power distribution and electric drive systems, IRLIZ34GPBF-VB can effectively handle medium voltage applications. It can handle high currents and provide stable switching performance, which helps to improve the reliability and efficiency of automotive electronic systems.

4. **Motor Controller**: In motor controller applications, the MOSFET’s high switching efficiency and low conduction losses can be used to control the start and operation of the motor, especially in motor drive systems that require high current and reliable switching performance.

The IRLIZ34GPBF-VB’s medium voltage capability, low on-resistance, and high switching efficiency make it an excellent choice for medium voltage applications such as power management, DC-DC converters, automotive electronic systems, and motor controllers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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