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IRLIZ14G-VB Product details
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IRLIZ14G-VB MOSFET Product Introduction
IRLIZ14G-VB is a high-performance single N-channel MOSFET in TO220F package, designed for medium and high voltage applications. The MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and a gate threshold voltage (Vth) of 1.7V. Its on-resistance (RDS(ON)) is 27mΩ@VGS=10V, supporting a drain current (ID) of up to 45A. IRLIZ14G-VB uses advanced trench technology with low conduction losses and excellent thermal performance, suitable for a variety of applications requiring high current and medium voltage.
IRLIZ14G-VB is a high-performance single N-channel MOSFET in TO220F package, designed for medium and high voltage applications. The MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and a gate threshold voltage (Vth) of 1.7V. Its on-resistance (RDS(ON)) is 27mΩ@VGS=10V, supporting a drain current (ID) of up to 45A. IRLIZ14G-VB uses advanced trench technology with low conduction losses and excellent thermal performance, suitable for a variety of applications requiring high current and medium voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | 27mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
IRLIZ14G-VB MOSFET Detailed parameter description
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 27mΩ @ VGS=10V
- **Drain current (ID)**: 45A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Power dissipation (PD)**: 62W
- **Package pins**: Three pins (Drain, Gate, Source)
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 27mΩ @ VGS=10V
- **Drain current (ID)**: 45A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Power dissipation (PD)**: 62W
- **Package pins**: Three pins (Drain, Gate, Source)
Domain and module applications：
Applications and module examples
1. **Switching Mode Power Supply (SMPS)**
- IRLIZ14G-VB is suitable for the main switch component in a high-efficiency switching mode power supply (SMPS). Its low on-resistance and high current capability help improve power conversion efficiency and reduce power loss, and is widely used in electronic devices such as computer power supplies and LED drivers.
2. **Motor Drive**
- In motor drive systems, IRLIZ14G-VB can be used to control DC motors or stepper motors. Its high current handling capability and low on-resistance ensure efficient and stable operation of the motor, and is suitable for industrial automation equipment, household appliances and other occasions that require precise motor control.
3. **Power Amplifier**
- This MOSFET is also widely used in power amplifiers. Whether it is an audio system or a wireless communication device, the high voltage and high current capability of IRLIZ14G-VB can improve the efficiency of signal processing and ensure good amplification performance.
4. **Battery Management System**
- IRLIZ14G-VB can be used in battery management systems, especially in charge and discharge control applications that require high current and medium voltage. Its excellent conduction performance helps optimize charging efficiency and protect batteries, and is suitable for battery management modules in electric vehicles and UPS systems.
The design of IRLIZ14G-VB makes it perform well in a variety of high current and medium voltage applications, providing reliable performance and efficient energy management.
1. **Switching Mode Power Supply (SMPS)**
- IRLIZ14G-VB is suitable for the main switch component in a high-efficiency switching mode power supply (SMPS). Its low on-resistance and high current capability help improve power conversion efficiency and reduce power loss, and is widely used in electronic devices such as computer power supplies and LED drivers.
2. **Motor Drive**
- In motor drive systems, IRLIZ14G-VB can be used to control DC motors or stepper motors. Its high current handling capability and low on-resistance ensure efficient and stable operation of the motor, and is suitable for industrial automation equipment, household appliances and other occasions that require precise motor control.
3. **Power Amplifier**
- This MOSFET is also widely used in power amplifiers. Whether it is an audio system or a wireless communication device, the high voltage and high current capability of IRLIZ14G-VB can improve the efficiency of signal processing and ensure good amplification performance.
4. **Battery Management System**
- IRLIZ14G-VB can be used in battery management systems, especially in charge and discharge control applications that require high current and medium voltage. Its excellent conduction performance helps optimize charging efficiency and protect batteries, and is suitable for battery management modules in electric vehicles and UPS systems.
The design of IRLIZ14G-VB makes it perform well in a variety of high current and medium voltage applications, providing reliable performance and efficient energy management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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