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IRLI530-VB Product details
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IRLI530-VB MOSFET Product Introduction
IRLI530-VB is a single N-channel MOSFET in TO220F package, designed for medium-high voltage and high current applications. The MOSFET supports a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, with a gate threshold voltage (Vth) of 1.8V. Its on-resistance (RDS(ON)) is 86mΩ@VGS=10V, and it can withstand a drain current (ID) of up to 18A. IRLI530-VB uses advanced trench technology, providing good switching performance and low conduction losses, making it ideal for applications requiring medium voltage and higher current.
IRLI530-VB is a single N-channel MOSFET in TO220F package, designed for medium-high voltage and high current applications. The MOSFET supports a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, with a gate threshold voltage (Vth) of 1.8V. Its on-resistance (RDS(ON)) is 86mΩ@VGS=10V, and it can withstand a drain current (ID) of up to 18A. IRLI530-VB uses advanced trench technology, providing good switching performance and low conduction losses, making it ideal for applications requiring medium voltage and higher current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
IRLI530-VB MOSFET Detailed parameter description
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 86mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Power dissipation (PD)**: 62W
- **Package pins**: Three pins (Drain, Gate, Source)
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 86mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Power dissipation (PD)**: 62W
- **Package pins**: Three pins (Drain, Gate, Source)
Domain and module applications：
Applications and module examples
1. **Switching Power Supply**
- IRLI530-VB is suitable for use as the main switching element in a switching power supply (SMPS). Its low on-resistance and high current handling capability help reduce energy loss and improve the overall efficiency and stability of the power supply, making it suitable for use in electronic devices such as computer power supplies and TV power supplies.
2. **Motor Drive**
- In motor drive systems, IRLI530-VB can be used to control DC motors or stepper motors. Its high current capability and low on-resistance ensure efficient operation and reliable control of the motor, making it suitable for motor drive applications in industrial automation and home appliances.
3. **Power Amplifier**
- This MOSFET can be used in the switching and gain control sections of a power amplifier. In audio equipment and communication equipment, the high voltage withstand capability and low on-resistance of IRLI530-VB help improve signal quality and amplification.
4. **Battery Management System**
- IRLI530-VB is used in battery management systems to control the battery charging and discharging process. Its high current carrying capacity and low on-resistance help improve charging efficiency and reduce energy loss, and is suitable for applications such as electric vehicles and UPS systems that require efficient battery management.
The design of IRLI530-VB makes it excel in a variety of applications that require high voltage and high current handling, providing reliable performance and efficient energy management.
1. **Switching Power Supply**
- IRLI530-VB is suitable for use as the main switching element in a switching power supply (SMPS). Its low on-resistance and high current handling capability help reduce energy loss and improve the overall efficiency and stability of the power supply, making it suitable for use in electronic devices such as computer power supplies and TV power supplies.
2. **Motor Drive**
- In motor drive systems, IRLI530-VB can be used to control DC motors or stepper motors. Its high current capability and low on-resistance ensure efficient operation and reliable control of the motor, making it suitable for motor drive applications in industrial automation and home appliances.
3. **Power Amplifier**
- This MOSFET can be used in the switching and gain control sections of a power amplifier. In audio equipment and communication equipment, the high voltage withstand capability and low on-resistance of IRLI530-VB help improve signal quality and amplification.
4. **Battery Management System**
- IRLI530-VB is used in battery management systems to control the battery charging and discharging process. Its high current carrying capacity and low on-resistance help improve charging efficiency and reduce energy loss, and is suitable for applications such as electric vehicles and UPS systems that require efficient battery management.
The design of IRLI530-VB makes it excel in a variety of applications that require high voltage and high current handling, providing reliable performance and efficient energy management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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