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IRLHM620TRPBF-VB Product details

Product introduction:

IRLHM620TRPBF-VB MOSFET Product Introduction

The IRLHM620TRPBF-VB is a high-performance N-channel MOSFET in a compact DFN8 (3x3mm) package, ideal for space-constrained applications. The MOSFET has a maximum drain-source voltage (VDS) of 30V and supports a gate drive voltage (VGS) of ±20V. The on-resistance (RDS(ON)) of the IRLHM620TRPBF-VB is 3mΩ at a gate voltage of 4.5V and 2mΩ at a gate voltage of 10V, providing extremely low resistance to reduce power dissipation. Its maximum continuous drain current (ID) is 70A, making it an excellent performer in high current applications. This MOSFET using Trench technology ensures excellent performance at high switching frequencies, suitable for a variety of circuit designs requiring high efficiency and high power density.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 1.7V 70A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 30V 1.7V 70A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 30V 1.7V 70A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
IRLHM620TRPBF-VB Detailed parameter description

- **Package type**: DFN8 (3x3mm)
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 70A
- **Technology type**: Trench technology
- **Power dissipation (PD)**: 2W (estimated, depends on heat dissipation conditions)

Domain and module applications:

Applications and modules

1. **Efficient power management**
The low on-resistance and high current handling capability of the IRLHM620TRPBF-VB make it ideal for use in efficient power management systems. In switch mode power supplies (SMPS), this MOSFET can effectively reduce power dissipation and heat loss, improving overall energy efficiency.

2. **Mobile device power**
Due to its compact DFN8 package, the IRLHM620TRPBF-VB is particularly suitable for space-constrained applications such as power management in mobile devices. Its high current capability and low RDS(ON) ensure that the device can still operate stably under high loads.

3. **Power tools and battery management**
In power tools and battery management systems, this MOSFET can handle high currents and has excellent conduction performance. Its high current capability and low on-resistance enable it to provide stable current control, extend battery life and improve the efficiency of power tools.

4. **LED drive circuit**
IRLHM620TRPBF-VB is also suitable for high-power LED drive circuits. Its low RDS(ON) helps improve the efficiency and brightness of LEDs, especially in high-power LED applications, it can effectively manage current and reduce heat generation.

These applications demonstrate the wide applicability of IRLHM620TRPBF-VB in various fields that require high power density, high efficiency and compact design. It can provide reliable solutions for high-performance power management, space-constrained mobile devices, battery management systems, and high-efficiency LED drivers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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