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IRL8113SPBF-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IRL8113SPBF-VB is a high-performance single N-channel MOSFET with a TO263 package. Using advanced Trench technology, this MOSFET has extremely low on-resistance (RDS(ON)) and a drain current capability of up to 98A. Its VDS (drain-source withstand voltage) is 30V, which is suitable for low to medium voltage applications. IRL8113SPBF-VB is designed for high-efficiency switching applications, can work stably in high frequency and high current environments, and provides excellent current conduction and power management performance.
IRL8113SPBF-VB is a high-performance single N-channel MOSFET with a TO263 package. Using advanced Trench technology, this MOSFET has extremely low on-resistance (RDS(ON)) and a drain current capability of up to 98A. Its VDS (drain-source withstand voltage) is 30V, which is suitable for low to medium voltage applications. IRL8113SPBF-VB is designed for high-efficiency switching applications, can work stably in high frequency and high current environments, and provides excellent current conduction and power management performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description:
- **Model**: IRL8113SPBF-VB
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 30V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Drain current (ID)**: 98A
- **Technology**: Trench
- **Model**: IRL8113SPBF-VB
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 30V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Drain current (ID)**: 98A
- **Technology**: Trench
Domain and module applications：
3. Applications and modules:
- **High-efficiency DC-DC converter**: IRL8113SPBF-VB is very suitable for switching elements in DC-DC converters due to its ultra-low on-resistance (2.4mΩ @ VGS=10V). This high-efficiency MOSFET can significantly reduce energy loss and improve conversion efficiency, which is particularly important for applications that require efficient power conversion.
- **Motor drive circuit**: In motor drive applications, the high current capability (98A) and low on-resistance of this MOSFET make it suitable for high-power motor control. It can provide stable current and low-power operation to effectively drive the motor load.
- **Power management system**: IRL8113SPBF-VB is suitable for various power management modules, such as battery management systems and power distribution networks. Its low RDS(ON) can reduce power consumption and improve system efficiency.
- **Communication Equipment**: This MOSFET can be used in power amplifiers and switching circuits in communication equipment. Its high current carrying capacity and low on-resistance ensure stable signal transmission and low power operation.
The high performance characteristics of this MOSFET enable it to perform well in a variety of high current and high efficiency application scenarios, and it is an important component in modern power electronics design.
- **High-efficiency DC-DC converter**: IRL8113SPBF-VB is very suitable for switching elements in DC-DC converters due to its ultra-low on-resistance (2.4mΩ @ VGS=10V). This high-efficiency MOSFET can significantly reduce energy loss and improve conversion efficiency, which is particularly important for applications that require efficient power conversion.
- **Motor drive circuit**: In motor drive applications, the high current capability (98A) and low on-resistance of this MOSFET make it suitable for high-power motor control. It can provide stable current and low-power operation to effectively drive the motor load.
- **Power management system**: IRL8113SPBF-VB is suitable for various power management modules, such as battery management systems and power distribution networks. Its low RDS(ON) can reduce power consumption and improve system efficiency.
- **Communication Equipment**: This MOSFET can be used in power amplifiers and switching circuits in communication equipment. Its high current carrying capacity and low on-resistance ensure stable signal transmission and low power operation.
The high performance characteristics of this MOSFET enable it to perform well in a variety of high current and high efficiency application scenarios, and it is an important component in modern power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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