Featured Model

Your present location > Home page > Featured Model

IRL8113PBF-VB Product details

Product introduction:

1. Product Introduction (IRL8113PBF-VB)

The IRL8113PBF-VB is a high-performance single N-channel power MOSFET in a TO220 package. The device is particularly suitable for high-current and high-efficiency switching applications, with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. The IRL8113PBF-VB has a turn-on voltage (Vth) of 1.7V, showing a low gate drive requirement. Its on-resistance is 4mΩ at a gate voltage of 4.5V and 3mΩ at a gate voltage of 10V, enabling it to operate efficiently at a current of 120A. Using Trench technology, this MOSFET is suitable for applications requiring high current carrying capacity and low switching losses.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 30V 1.7V 120A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
II. Detailed parameter description

| Parameter| Value|
|---------------------|-------------------------------|
| **Model** | IRL8113PBF-VB |
| **Package type** | TO220 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throughput voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 4mΩ @ VGS=4.5V |
| **On-resistance (RDS(ON))** | 3mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 120A |
| **Technology** | Trench |
| **Operating temperature range** | -55°C to 175°C |
| **Maximum power dissipation** | 250W |
| **Switching speed** | Fast switching times for high frequency applications |
| **Breakdown voltage** | 30V |

Domain and module applications:

III. Application fields and module examples

1. **Power supply management**: The low on-resistance and high current capability of IRL8113PBF-VB make it very suitable for use as a switching element in power management systems. In high-power power supplies, it can effectively reduce energy loss and improve overall efficiency.

2. **Motor drive circuit**: Due to its high current carrying capacity and low on-resistance, IRL8113PBF-VB is suitable for motor drive applications such as power tools and electric vehicle control systems. In these applications, it can handle high current loads and provide stable switching performance.

3. **High-frequency switching applications**: In applications that require fast switching, such as switching power supplies and inverters, IRL8113PBF-VB is able to provide efficient switching operations, reduce switching losses and improve system efficiency.

4. **Industrial control systems**: The high current and high efficiency characteristics of this MOSFET make it suitable for a variety of industrial control modules, including automation equipment and power converters. In these areas, it ensures stable system operation and improves reliability.

The superior performance of the IRL8113PBF-VB enables it to excel in a variety of applications requiring high current and high efficiency, especially in power supplies and motor drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat