IRL7833SPBF-VB Product details
Product introduction:
IRL7833SPBF-VB is a high-power, high-efficiency single N-Channel MOSFET in a TO263 package. This MOSFET has a drain-source voltage (VDS) of 30V and can withstand a drain current (ID) of up to 150A, making it ideal for high-current, high-power applications. Its gate threshold voltage (Vth) is 1.7V and its on-resistance (RDS(ON)) is 2.3mΩ (@VGS=10V) or 3.2mΩ (@VGS=4.5V), which makes it perform well in applications with higher switching frequencies. The IRL7833SPBF-VB uses Trench technology to provide excellent switching performance and low power consumption, making it suitable for a variety of electronic devices and systems that require high efficiency and high reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS=4.5V
- 2.3mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
- **Power consumption**: Up to 200W (typical, depending on heat dissipation conditions)
- **Switching speed**: Very fast, suitable for high-frequency applications
- **Thermal resistance**: Excellent thermal management performance, effectively reducing the internal temperature rise of the device
Domain and module applications:
1. **Power management module**: The low on-resistance and high drain current capability of IRL7833SPBF-VB make it an ideal choice in power management modules. In DC-DC converters and AC-DC adapters, it can provide efficient switching functions, reduce energy losses, and improve conversion efficiency.
2. **Electric Vehicles (EV)**: In the motor drive system and battery management system of electric vehicles, this MOSFET is able to handle high currents and ensure system stability. Its low RDS(ON) value helps reduce current losses and improve the energy efficiency and range of electric vehicles.
3. **Battery Charger**: For high-current battery chargers, IRL7833SPBF-VB is able to provide a stable charging current while having a low on-resistance, which helps improve charging efficiency and shorten charging time.
4. **Inverters and power converters**: In solar inverters or other types of power converters, this MOSFET can be used as a high-efficiency switching element to handle high power output and ensure stable operation of the system. It is suitable for application scenarios that require high-frequency switching and high current.
In short, IRL7833SPBF-VB is widely used in power modules, automotive electronics, and battery management that require high power handling, high efficiency, and high reliability due to its high current carrying capacity and low on-resistance.
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