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IRL7833L-VB Product details
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IRL7833L-VB MOSFET Product Introduction
IRL7833L-VB is a high-performance single N-channel MOSFET in TO262 package. It is designed to withstand high current and low voltage applications, with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. This MOSFET uses advanced trench technology and has extremely low on-resistance, which can effectively reduce switching losses and improve system efficiency. Its low on-resistance makes it particularly suitable for providing stable performance in high current and high frequency applications.
IRL7833L-VB is a high-performance single N-channel MOSFET in TO262 package. It is designed to withstand high current and low voltage applications, with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. This MOSFET uses advanced trench technology and has extremely low on-resistance, which can effectively reduce switching losses and improve system efficiency. Its low on-resistance makes it particularly suitable for providing stable performance in high current and high frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
IRL7833L-VB MOSFET Detailed parameter description
- **Package type**: TO262
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.24mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Power dissipation (PD)**: 75W
- **Package pin**: Three pins (Drain, Gate, Source)
- **Package type**: TO262
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.24mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Power dissipation (PD)**: 75W
- **Package pin**: Three pins (Drain, Gate, Source)
Domain and module applications：
Applications and module examples
1. **Power conversion and switching power supplies**
- In switching power supplies and power converters, the low on-resistance and high current capability of the IRL7833L-VB make it an ideal choice for efficient power management, providing low loss and high efficiency current control.
2. **Electric Vehicles (EV)**
- This MOSFET can be used in battery management systems and motor drive modules in electric vehicles, where its high current carrying capacity and low on-resistance help improve the overall performance and energy efficiency of electric vehicles.
3. **High power motor drive**
- In high power motor drive applications, such as industrial motor control and servo motor drive, the high current handling capability and low on-resistance of the IRL7833L-VB ensure efficient and stable operation of the motor.
4. **Battery Management and Energy Storage Systems**
- This MOSFET performs well in battery management and energy storage systems, capable of handling large currents, ensuring low losses and high efficiency during battery charging and discharging, and improving the overall reliability and life of the system.
Through its excellent current handling capability and low on-resistance, the IRL7833L-VB provides excellent performance in high current and high frequency applications, suitable for a variety of demanding power control and management systems.
1. **Power conversion and switching power supplies**
- In switching power supplies and power converters, the low on-resistance and high current capability of the IRL7833L-VB make it an ideal choice for efficient power management, providing low loss and high efficiency current control.
2. **Electric Vehicles (EV)**
- This MOSFET can be used in battery management systems and motor drive modules in electric vehicles, where its high current carrying capacity and low on-resistance help improve the overall performance and energy efficiency of electric vehicles.
3. **High power motor drive**
- In high power motor drive applications, such as industrial motor control and servo motor drive, the high current handling capability and low on-resistance of the IRL7833L-VB ensure efficient and stable operation of the motor.
4. **Battery Management and Energy Storage Systems**
- This MOSFET performs well in battery management and energy storage systems, capable of handling large currents, ensuring low losses and high efficiency during battery charging and discharging, and improving the overall reliability and life of the system.
Through its excellent current handling capability and low on-resistance, the IRL7833L-VB provides excellent performance in high current and high frequency applications, suitable for a variety of demanding power control and management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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