IRL640STRPBF-VB Product details
Product introduction:
IRL640STRPBF-VB is a high-performance N-channel MOSFET in TO263 package, designed based on Trench technology, with excellent electrical characteristics and reliability. It provides a drain-source voltage (VDS) of up to 200V, and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) of the device is 3V, and the typical on-resistance (RDS(ON)) is 48mΩ@VGS=10V. The maximum drain current (ID) can reach 40A, making it suitable for high current and high voltage applications. IRL640STRPBF-VB has good switching characteristics and low conduction losses, making it suitable for various power conversion and control applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package**: TO263
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 48mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: Trench
- **Maximum power dissipation**: 62.5W
- **Switching speed**: With fast switching characteristics, suitable for high-frequency applications.
- **Operating temperature range**: -55°C to 175°C
Domain and module applications:
1. **Power Conversion and Power Management**
IRL640STRPBF-VB performs well in high-power DC-DC converters and power management systems. Its low on-resistance and high drain current capability make it very suitable for high-efficiency power modules such as server power supplies, power converters and battery management systems, which can effectively reduce energy loss and improve system efficiency.
2. **Motor Drive**
In motor drive applications, the high current carrying capacity and voltage resistance of IRL640STRPBF-VB enable it to handle the control of high-power DC motors and stepper motors. It is suitable for motor drives in power tools, electric vehicle drive systems, and automation equipment, providing stable current control and reliable operation performance.
3. **Switching Power Supply and Load Switch**
Due to its low RDS(ON) and high voltage resistance, this MOSFET can provide excellent performance in switching power supply and load switch applications. It is suitable for use in power switches, load isolation, and protection circuits, and performs particularly well in applications that require high power and high efficiency, such as in communications equipment, consumer electronics, and industrial automation equipment.
4. **New Energy Systems**
IRL640STRPBF-VB is also suitable for new energy systems, such as photovoltaic inverters and energy storage systems. Its high voltage and high current capabilities enable it to handle high voltage current conversion in photovoltaic power generation systems, as well as power regulation and control in energy storage systems, ensuring efficient and stable operation of the system.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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