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IRL620STRR-VB Product details
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IRL620STRR-VB MOSFET Product Introduction
**IRL620STRR-VB** is a high voltage N-type MOSFET in TO-263 package. Designed for high voltage and high current applications, this MOSFET can withstand drain-source voltages up to 200V and has a maximum drain current capability of 10A. Its gate-source voltage (VGS) is up to ±20V, making it suitable for applications requiring higher gate voltage control. The device has a threshold voltage (Vth) of 3V, ensuring that it can be turned on at a lower gate-source voltage. The IRL620STRR-VB uses Trench technology to provide a lower on-resistance (RDS(ON)), ensuring high efficiency and stability.
**IRL620STRR-VB** is a high voltage N-type MOSFET in TO-263 package. Designed for high voltage and high current applications, this MOSFET can withstand drain-source voltages up to 200V and has a maximum drain current capability of 10A. Its gate-source voltage (VGS) is up to ±20V, making it suitable for applications requiring higher gate voltage control. The device has a threshold voltage (Vth) of 3V, ensuring that it can be turned on at a lower gate-source voltage. The IRL620STRR-VB uses Trench technology to provide a lower on-resistance (RDS(ON)), ensuring high efficiency and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | 300mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IRL620STRR-VB Detailed parameter description
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **Maximum drain current (ID)**: 10A
- **On-resistance (RDS(ON))**:
- 300mΩ @ VGS=10V
- **Technology**: Trench
- **Maximum power dissipation**: 94W
- **Thermal resistance (to case)**: 2.6°C/W
- **Operating temperature range**: -55°C to 175°C
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **Maximum drain current (ID)**: 10A
- **On-resistance (RDS(ON))**:
- 300mΩ @ VGS=10V
- **Technology**: Trench
- **Maximum power dissipation**: 94W
- **Thermal resistance (to case)**: 2.6°C/W
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
IRL620STRR-VB Applications and Modules
1. **High Voltage Power Switch**:
In applications where high voltage power needs to be controlled, the IRL620STRR-VB provides reliable switching performance. Its 200V drain-source voltage capability makes it suitable for high voltage power switches, ensuring system stability and reducing power consumption.
2. **Power Management System**:
In power management systems, this MOSFET can be used in high voltage power conversion and voltage regulation modules. Its low on-resistance and high voltage handling capabilities optimize power efficiency and reliability, making it an ideal choice for high-efficiency power management.
3. **Power Amplifier Protection Circuit**:
The IRL620STRR-VB can be used as a protection switch for power amplifiers to prevent overvoltage and overcurrent from damaging the amplifier. Its high voltage tolerance and excellent conductivity protect the power amplifier and ensure normal operation of the equipment.
4. **Load Switch in Industrial Equipment**:
In industrial control systems, this MOSFET is used as a load switch to handle the switching control of high voltage loads. Its high current carrying capacity and high voltage tolerance make it suitable for various industrial load switch applications, providing stable and reliable control.
In summary, **IRL620STRR-VB** is a MOSFET suitable for high voltage and high power applications. Its high drain-source voltage and low on-resistance make it perform well in power switching, power management, power amplifier protection and industrial load switching.
1. **High Voltage Power Switch**:
In applications where high voltage power needs to be controlled, the IRL620STRR-VB provides reliable switching performance. Its 200V drain-source voltage capability makes it suitable for high voltage power switches, ensuring system stability and reducing power consumption.
2. **Power Management System**:
In power management systems, this MOSFET can be used in high voltage power conversion and voltage regulation modules. Its low on-resistance and high voltage handling capabilities optimize power efficiency and reliability, making it an ideal choice for high-efficiency power management.
3. **Power Amplifier Protection Circuit**:
The IRL620STRR-VB can be used as a protection switch for power amplifiers to prevent overvoltage and overcurrent from damaging the amplifier. Its high voltage tolerance and excellent conductivity protect the power amplifier and ensure normal operation of the equipment.
4. **Load Switch in Industrial Equipment**:
In industrial control systems, this MOSFET is used as a load switch to handle the switching control of high voltage loads. Its high current carrying capacity and high voltage tolerance make it suitable for various industrial load switch applications, providing stable and reliable control.
In summary, **IRL620STRR-VB** is a MOSFET suitable for high voltage and high power applications. Its high drain-source voltage and low on-resistance make it perform well in power switching, power management, power amplifier protection and industrial load switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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