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IRL5602SPBF-VB Product details
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Product Introduction
**IRL5602SPBF-VB** is a high-performance unipolar P-channel MOSFET in a TO263 package. The MOSFET has a drain-source withstand voltage (VDS) of -30V and a maximum drain current (ID) of up to -75A. Its on-state resistance (RDS(ON)) is 8mΩ at VGS=10V and 11mΩ at VGS=4.5V. This MOSFET uses Trench technology to provide efficient switching performance and low conduction losses, making it ideal for high current and low resistance applications.
**IRL5602SPBF-VB** is a high-performance unipolar P-channel MOSFET in a TO263 package. The MOSFET has a drain-source withstand voltage (VDS) of -30V and a maximum drain current (ID) of up to -75A. Its on-state resistance (RDS(ON)) is 8mΩ at VGS=10V and 11mΩ at VGS=4.5V. This MOSFET uses Trench technology to provide efficient switching performance and low conduction losses, making it ideal for high current and low resistance applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | 8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Unipolar P channel
- **Drain-source withstand voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2.5V
- **On-state resistance (RDS(ON))**:
- 11mΩ @ VGS=4.5V
- 8mΩ @ VGS=10V
- **Maximum drain current (ID)**: -75A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Unipolar P channel
- **Drain-source withstand voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2.5V
- **On-state resistance (RDS(ON))**:
- 11mΩ @ VGS=4.5V
- 8mΩ @ VGS=10V
- **Maximum drain current (ID)**: -75A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Switch**: The IRL5602SPBF-VB is suitable for various power switch applications, such as high-efficiency switches in DC-DC converters. Its low on-resistance and high current carrying capacity help reduce energy losses and improve the overall efficiency of the power module.
2. **Motor Drive**: In motor drive systems, the IRL5602SPBF-VB can be used as a P-channel MOSFET to control the reverse current and power switch of the motor. Its high current capability and low RDS(ON) can effectively improve the efficiency and reliability of the motor drive system.
3. **Battery Management System (BMS)**: In battery management systems, this MOSFET can be used as a battery switch and protection circuit. Its high current handling capability and low on-resistance ensure safe and efficient management of the battery, especially in situations where high current and low power consumption are required.
4. **Automotive electronics**: In automotive electronics applications, such as automotive lighting control, electric seat adjustment, and other power control modules, the IRL5602SPBF-VB is able to handle high currents and provide stable switching performance in automotive environments. Its high voltage resistance and low RDS(ON) characteristics make it suitable for use in automotive electronic systems.
5. **LED drivers**: In LED drivers, the IRL5602SPBF-VB can be used to control the switching and dimming functions of LEDs. Its low on-resistance can reduce the heat generated during the switching process, thereby improving the efficiency and service life of LED lighting systems.
1. **Power Switch**: The IRL5602SPBF-VB is suitable for various power switch applications, such as high-efficiency switches in DC-DC converters. Its low on-resistance and high current carrying capacity help reduce energy losses and improve the overall efficiency of the power module.
2. **Motor Drive**: In motor drive systems, the IRL5602SPBF-VB can be used as a P-channel MOSFET to control the reverse current and power switch of the motor. Its high current capability and low RDS(ON) can effectively improve the efficiency and reliability of the motor drive system.
3. **Battery Management System (BMS)**: In battery management systems, this MOSFET can be used as a battery switch and protection circuit. Its high current handling capability and low on-resistance ensure safe and efficient management of the battery, especially in situations where high current and low power consumption are required.
4. **Automotive electronics**: In automotive electronics applications, such as automotive lighting control, electric seat adjustment, and other power control modules, the IRL5602SPBF-VB is able to handle high currents and provide stable switching performance in automotive environments. Its high voltage resistance and low RDS(ON) characteristics make it suitable for use in automotive electronic systems.
5. **LED drivers**: In LED drivers, the IRL5602SPBF-VB can be used to control the switching and dimming functions of LEDs. Its low on-resistance can reduce the heat generated during the switching process, thereby improving the efficiency and service life of LED lighting systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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