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IRL540PBF-VB Product details

Product introduction:

IRL540PBF-VB Product Introduction

The IRL540PBF-VB is a high voltage N-channel MOSFET in a TO-220 package, designed for applications requiring high voltage and high current. This MOSFET can withstand drain-source voltages (VDS) up to 100V, and the gate-source voltage (VGS) is rated at ±20V. Its gate threshold voltage (Vth) is 1.8V, allowing it to be turned on at a lower gate voltage, making it suitable for low-voltage driven switching applications. The IRL540PBF-VB has an on-resistance (RDS(ON)) of 36mΩ at VGS = 10V and a maximum continuous drain current (ID) of 55A. It uses trench technology, which helps reduce power consumption and improve switching efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 1.8V 55A 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 1.8V 55A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 1.8V 55A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
IRL540PBF-VB Detailed parameter description

- **Package type**: TO-220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 38mΩ @ VGS = 4.5V
- 36mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 55A
- **Power dissipation**: 94W (max)
- **Operating temperature range**: -55°C to +175°C
- **Technology**: Trench technology
- **Input capacitance (Ciss)**: 950 pF (typ.)
- **Reverse recovery time (Trr)**: 150 ns
- **Turning delay time (Td(on))**: 20 ns
- **Turning delay time (Td(off))**: 80 ns

Domain and module applications:

Application examples of applicable fields and modules

1. **High voltage power switch**: The IRL540PBF-VB is suitable for high voltage power switch applications, such as the main switch in power management modules. This MOSFET can withstand drain-source voltages up to 100V and has a low on-resistance, which can effectively reduce power losses and improve power efficiency.

2. **DC-DC converter**: In DC-DC converters, the IRL540PBF-VB can be used in the high voltage step-down stage. Its low on-resistance and high current handling capability make it very suitable for buck converter designs that require high voltage inputs, providing efficient current control and stable conversion performance.

3. **Motor control**: In motor drive and control systems, the high voltage tolerance and good switching characteristics of the IRL540PBF-VB enable it to be used as a switching element in motor control circuits, especially in applications that need to control high voltage motor loads.

4. **Power Amplifier**: In power amplifier and inverter design, IRL540PBF-VB can provide high voltage and high current support, suitable for application scenarios that require high power output. Its low on-resistance helps reduce power loss and improve efficiency to meet the needs of power amplifier design.

IRL540PBF-VB is a high-voltage, high-current N-channel MOSFET suitable for power switches, DC-DC converters, motor control and power amplifiers. Its excellent performance and reliability can meet the needs of various high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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