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IRL530NSPBF-VB Product details

Product introduction:

IRL530NSPBF-VB Product Introduction

The IRL530NSPBF-VB is a high voltage N-channel MOSFET designed in a TO-263 package. Designed for high voltage applications, this MOSFET can withstand drain-source voltages (VDS) up to 100V and has a gate-source voltage (VGS) rating of ±20V. Its gate threshold voltage (Vth) is 1.8V, making it suitable for low voltage driven switching applications. The IRL530NSPBF-VB has an on-resistance (RDS(ON)) of 100mΩ at VGS = 10V and a maximum continuous drain current (ID) of 20A, combining high voltage handling capability with good switching performance. Trench technology is used to improve switching efficiency and reduce power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 100V 1.8V 20A 100mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 100V 1.8V 20A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 100V 1.8V 20A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
IRL530NSPBF-VB Detailed parameter description

- **Package type**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 20A
- **Power dissipation**: 50W (max)
- **Operating temperature range**: -55°C to +175°C
- **Technology**: Trench technology (Trench)
- **Input capacitance (Ciss)**: 850 pF (typical)
- **Reverse recovery time (Trr)**: 150 ns
- **Td(on) delay time**: 15 ns
- **Td(off) delay time**: 60 ns

Domain and module applications:

Applicable fields and application examples of modules

1. **Power management**: In power management systems, the IRL530NSPBF-VB can be used as a high voltage switch, such as in the main switch of a high voltage DC power supply. Its high voltage handling capability and low on-resistance ensure efficient power conversion and reliable current control, suitable for high-efficiency power modules and protection circuits.

2. **DC-DC converter**: This MOSFET can be used in the high voltage step-down stage in a DC-DC converter. Its low on-resistance helps reduce power loss and improve conversion efficiency, suitable for buck converter designs that require high voltage input.

3. **High voltage switching applications**: The IRL530NSPBF-VB performs well in application scenarios that require high voltage switching, such as in battery management systems and high voltage motor control systems. Its high voltage tolerance and excellent switching characteristics make it suitable for switch control of high voltage circuits.

4. **Inverters and power converters**: In inverters and power converters, IRL530NSPBF-VB provides high voltage tolerance and high efficiency switching capability, capable of withstanding high voltage loads, and is suitable for inverter designs and power conversion modules that require high performance and reliability.

IRL530NSPBF-VB is a high voltage, low on-resistance MOSFET suitable for a variety of applications such as power management, DC-DC conversion, high voltage switching and power conversion. Its excellent performance and reliability can meet the needs of various high voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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