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IRL3803VSPBF-VB Product details
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IRL3803VSPBF-VB Product Introduction
The IRL3803VSPBF-VB is a high-performance N-Channel MOSFET in a TO263 package. It supports a drain-source voltage (VDS) of 30V and has a gate-source voltage (VGS) of ±20V. The MOSFET uses advanced Trench technology and has a low on-resistance of 2.7mΩ @ VGS = 4.5V and 2.4mΩ @ VGS = 10V. This device can withstand high currents of 98A and is suitable for applications requiring high current capacity and high performance.
The IRL3803VSPBF-VB is a high-performance N-Channel MOSFET in a TO263 package. It supports a drain-source voltage (VDS) of 30V and has a gate-source voltage (VGS) of ±20V. The MOSFET uses advanced Trench technology and has a low on-resistance of 2.7mΩ @ VGS = 4.5V and 2.4mΩ @ VGS = 10V. This device can withstand high currents of 98A and is suitable for applications requiring high current capacity and high performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 98A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 98A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
**IRL3803VSPBF-VB** Due to its high current handling capability and low on-resistance, it is suitable for a variety of high-efficiency and high-current demanding applications, including:
1. **DC-DC Converters**: In DC-DC converters, especially high-efficiency power modules, this MOSFET can reduce power losses and improve conversion efficiency. Its high current carrying capacity makes it suitable for industrial power management and communication equipment power supply.
2. **Power Management System**: In servers, computer power supplies and uninterruptible power supplies (UPS), IRL3803VSPBF-VB provides low RDS(ON) and high-efficiency switching performance to help optimize power efficiency, reduce heat dissipation and ensure system stability.
3. **Automotive Electronic Systems**: Suitable for automotive electronic systems such as electric power steering, electric pumps and battery management systems. Its high current carrying capacity and low loss characteristics ensure the need for efficient power handling in the automotive field.
4. **Motor Control Module**: This MOSFET can be used in motor control systems, such as power tools, home appliance motor drives, motor drive modules in electric vehicles, etc., to provide low-loss, high-efficiency motor control.
5. **Load Switch and Power Switch**: In various load and power switching applications, such as solar inverters, energy storage systems, home appliances, etc., this MOSFET ensures efficient and reliable power switching and control.
**IRL3803VSPBF-VB**'s wide application capabilities make it an ideal choice for various power management, conversion and control systems that require high current and high efficiency, especially in scenarios that require low on-resistance and high current handling.
**IRL3803VSPBF-VB** Due to its high current handling capability and low on-resistance, it is suitable for a variety of high-efficiency and high-current demanding applications, including:
1. **DC-DC Converters**: In DC-DC converters, especially high-efficiency power modules, this MOSFET can reduce power losses and improve conversion efficiency. Its high current carrying capacity makes it suitable for industrial power management and communication equipment power supply.
2. **Power Management System**: In servers, computer power supplies and uninterruptible power supplies (UPS), IRL3803VSPBF-VB provides low RDS(ON) and high-efficiency switching performance to help optimize power efficiency, reduce heat dissipation and ensure system stability.
3. **Automotive Electronic Systems**: Suitable for automotive electronic systems such as electric power steering, electric pumps and battery management systems. Its high current carrying capacity and low loss characteristics ensure the need for efficient power handling in the automotive field.
4. **Motor Control Module**: This MOSFET can be used in motor control systems, such as power tools, home appliance motor drives, motor drive modules in electric vehicles, etc., to provide low-loss, high-efficiency motor control.
5. **Load Switch and Power Switch**: In various load and power switching applications, such as solar inverters, energy storage systems, home appliances, etc., this MOSFET ensures efficient and reliable power switching and control.
**IRL3803VSPBF-VB**'s wide application capabilities make it an ideal choice for various power management, conversion and control systems that require high current and high efficiency, especially in scenarios that require low on-resistance and high current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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