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IRL3803SPBF-VB Product details
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1. IRL3803SPBF-VB Product Introduction
IRL3803SPBF-VB is a high-performance single-channel N-type MOSFET in TO263 package with excellent current handling capability and ultra-low on-resistance, suitable for high-efficiency power conversion and switching applications. The device has a drain-source voltage (VDS) of 30V, a gate voltage (VGS) rated at ±20V, and a threshold voltage (Vth) of 1.7V, which enables efficient switching at a lower gate drive voltage. Its on-resistance (RDS(ON)) is 2.7mΩ at VGS=4.5V and 2.4mΩ at VGS=10V, and the maximum drain current (ID) is up to 98A. It uses advanced Trench technology to achieve high efficiency and low loss, which is particularly suitable for power management and high-power applications.
IRL3803SPBF-VB is a high-performance single-channel N-type MOSFET in TO263 package with excellent current handling capability and ultra-low on-resistance, suitable for high-efficiency power conversion and switching applications. The device has a drain-source voltage (VDS) of 30V, a gate voltage (VGS) rated at ±20V, and a threshold voltage (Vth) of 1.7V, which enables efficient switching at a lower gate drive voltage. Its on-resistance (RDS(ON)) is 2.7mΩ at VGS=4.5V and 2.4mΩ at VGS=10V, and the maximum drain current (ID) is up to 98A. It uses advanced Trench technology to achieve high efficiency and low loss, which is particularly suitable for power management and high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description of IRL3803SPBF-VB
| **Parameter** | **Detailed description** |
|------------------------|------------------------------------------|
| **Package type** | TO263 |
| **Channel configuration** | Single channel N-type MOSFET |
| **Maximum drain-source voltage (VDS)** | 30V |
| **Maximum gate voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 2.7mΩ @ VGS=4.5V |
| **On-resistance (RDS(ON))** | 2.4mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 98A |
| **Technology type** | Trench technology|
| **Maximum power dissipation** | 150W |
| **Operating temperature range** | -55°C to 175°C |
| **Gate charge (Qg)** | 160nC |
| **Output capacitance (Coss)** | 1600pF |
| **Package features** | Provides efficient heat dissipation and high current capability|
| **Parameter** | **Detailed description** |
|------------------------|------------------------------------------|
| **Package type** | TO263 |
| **Channel configuration** | Single channel N-type MOSFET |
| **Maximum drain-source voltage (VDS)** | 30V |
| **Maximum gate voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 2.7mΩ @ VGS=4.5V |
| **On-resistance (RDS(ON))** | 2.4mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 98A |
| **Technology type** | Trench technology|
| **Maximum power dissipation** | 150W |
| **Operating temperature range** | -55°C to 175°C |
| **Gate charge (Qg)** | 160nC |
| **Output capacitance (Coss)** | 1600pF |
| **Package features** | Provides efficient heat dissipation and high current capability|
Domain and module applications：
III. Application fields and module examples
**1. High-efficiency power conversion **
IRL3803SPBF-VB is widely used in power conversion modules, especially in applications such as DC-DC converters and voltage regulators. Its low on-resistance can effectively reduce power loss and improve system efficiency, and is suitable for power management systems that require efficient energy transfer.
**2. Motor drive control **
In the motor drive control of power tools and industrial automation equipment, the high current handling capability and low loss characteristics of IRL3803SPBF-VB can ensure stable operation of the motor at high power. This MOSFET can reduce the heating problem in motor control and improve the reliability and service life of the system.
**3. Battery Management System (BMS) **
In electric vehicles and energy storage systems, IRL3803SPBF-VB is suitable for battery management systems, especially in charge and discharge control circuits. Its high current handling capability and low on-resistance enable it to effectively control large currents, ensure efficient charging and discharging of battery packs, and extend battery life.
**4. Solar PV Inverter**
In solar PV systems, IRL3803SPBF-VB can be used as a power switch in the inverter module to maximize the energy conversion efficiency of the photovoltaic panel. Its low loss characteristics ensure efficient energy transfer and conversion in high current applications.
**5. Communication Equipment Power Supply**
IRL3803SPBF-VB can also be used in communication equipment power supply modules. Its high efficiency and low power consumption can effectively support the stable operation of communication base stations and servers, ensure the reliable operation of equipment under high current demand, and reduce operating costs.
In summary, IRL3803SPBF-VB is a MOSFET suitable for a variety of high-power applications. It is widely used in power conversion, motor drive, BMS, electric vehicles, solar systems, and communication equipment. Its low on-resistance and high current capability ensure excellent performance in various high-efficiency energy transfer scenarios.
**1. High-efficiency power conversion **
IRL3803SPBF-VB is widely used in power conversion modules, especially in applications such as DC-DC converters and voltage regulators. Its low on-resistance can effectively reduce power loss and improve system efficiency, and is suitable for power management systems that require efficient energy transfer.
**2. Motor drive control **
In the motor drive control of power tools and industrial automation equipment, the high current handling capability and low loss characteristics of IRL3803SPBF-VB can ensure stable operation of the motor at high power. This MOSFET can reduce the heating problem in motor control and improve the reliability and service life of the system.
**3. Battery Management System (BMS) **
In electric vehicles and energy storage systems, IRL3803SPBF-VB is suitable for battery management systems, especially in charge and discharge control circuits. Its high current handling capability and low on-resistance enable it to effectively control large currents, ensure efficient charging and discharging of battery packs, and extend battery life.
**4. Solar PV Inverter**
In solar PV systems, IRL3803SPBF-VB can be used as a power switch in the inverter module to maximize the energy conversion efficiency of the photovoltaic panel. Its low loss characteristics ensure efficient energy transfer and conversion in high current applications.
**5. Communication Equipment Power Supply**
IRL3803SPBF-VB can also be used in communication equipment power supply modules. Its high efficiency and low power consumption can effectively support the stable operation of communication base stations and servers, ensure the reliable operation of equipment under high current demand, and reduce operating costs.
In summary, IRL3803SPBF-VB is a MOSFET suitable for a variety of high-power applications. It is widely used in power conversion, motor drive, BMS, electric vehicles, solar systems, and communication equipment. Its low on-resistance and high current capability ensure excellent performance in various high-efficiency energy transfer scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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