IRL3715ZCSTRLP-VB Product details
Product introduction:
**IRL3715ZCSTRLP-VB** is a high-performance N-Channel MOSFET in **TO263** package. This MOSFET adopts Trench technology and is designed for high current and high-efficiency applications with excellent conduction performance. Its drain-source voltage (VDS) is **30V**, the absolute maximum value of the gate-source voltage (VGS) is **±20V**, and the gate threshold voltage (Vth) is **1.7V**. The on-resistance of IRL3715ZCSTRLP-VB is **18mΩ** at **VGS = 4.5V**, and the on-resistance is reduced to **12mΩ** at **VGS = 10V**, supporting a continuous drain current of up to **50A**. This MOSFET is designed to meet the needs of applications that require high current handling and low on-resistance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications:
The high performance characteristics of the IRL3715ZCSTRLP-VB make it suitable for a variety of high current and high efficiency applications, including:
1. Power Management: Due to its low on-resistance and high current capability, this MOSFET is suitable for high efficiency switching in power management systems, such as computer power supplies, server power supplies, and battery management systems. These applications require MOSFETs with excellent conduction performance to improve overall efficiency.
2. Automotive Electronics: In automotive electronic systems such as electric power steering, seat adjustment, and battery management systems, the IRL3715ZCSTRLP-VB can provide high current handling capabilities to ensure system reliability and performance.
3. DC-DC Converters: This MOSFET performs well in DC-DC converters and is suitable for industrial DC-DC power modules and communication equipment power supplies. Its low on-resistance can improve conversion efficiency and reduce power losses.
4. **Motor drive module**: The high current capability and low on-resistance of IRL3715ZCSTRLP-VB make it suitable for use in motor drive modules, such as motor control systems in industrial automation and motor control applications in home appliances.
5. **Power switch and load switch**: Due to its excellent switching performance, this MOSFET can be used in various power switch applications, such as load switches in uninterruptible power supplies (UPS) and solar power generation systems, to help achieve efficient power control.
In summary, **IRL3715ZCSTRLP-VB** is a high-efficiency N-Channel MOSFET that is particularly suitable for high current and high power applications. Its low on-resistance and high current handling capability make it have a wide range of application potentials in power management, electric vehicle electronics, DC-DC converters, motor drives, and power switch modules.
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