IRL3502SPBF-VB Product details
Product introduction:
**IRL3502SPBF-VB** is a high-performance N-channel MOSFET in TO-263 package, manufactured using Trench technology. Designed for low-voltage, high-current applications, this MOSFET features very low on-resistance and a wide gate-source voltage operating range. Its maximum drain-source voltage (VDS) is 20V, making it suitable for applications with lower voltage requirements. The threshold voltage (Vth) range of the IRL3502SPBF-VB is from 0.5V to 1.5V, enabling it to conduct reliably at lower gate voltages. Its on-resistance (RDS(ON)) is 6mΩ at a gate voltage of 4.5V and 9mΩ at a gate voltage of 2.5V. Due to its high current carrying capacity (ID of 85A), this MOSFET is particularly suitable for high-power and high-efficiency circuit designs.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **Drain current (ID)**: 85A
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=2.5V
- 6mΩ @ VGS=4.5V
- **Technology**: Trench
- **Maximum power dissipation**: 75W
- **Junction-to-case thermal resistance (RθJC)**: 2.5°C/W
- **Operating temperature range**: -55°C to 175°C
Domain and module applications:
**IRL3502SPBF-VB** MOSFET is very suitable for the following fields and modules due to its high current carrying capacity, low on-resistance and low threshold voltage:
1. **Power Management**: In power management circuits, IRL3502SPBF-VB can be used in high-efficiency switching power supplies and DC-DC converters. Due to its low on-resistance, it can reduce energy loss and improve system efficiency, and is suitable for switching applications with high current loads.
2. **Motor Drive**: For motor drive systems, especially high-current applications that need to run at low voltage, IRL3502SPBF-VB is an ideal choice. It can efficiently control the starting and running of the motor, providing reliable performance and stable current supply.
3. **High Power Switch**: In applications that require high power switching, such as power modules or high power load control, the high current capability and low on-resistance of the IRL3502SPBF-VB ensure reliable switching operation and low power consumption.
4. **Automotive Electronics**: In automotive electronic systems, the IRL3502SPBF-VB can be used to control high current loads in cars, such as power windows, seat adjustments, and other high power functions. Its excellent performance and high durability make it suitable for a variety of automotive applications.
In summary, the high performance and adaptability of the **IRL3502SPBF-VB** MOSFET make it play an important role in power management, motor drive, high power switching, and automotive electronics.
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