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IRL3402STRR-VB Product details
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Product Introduction
**IRL3402STRR-VB** is a high-performance N-Channel MOSFET in TO263 package. Designed with Trench technology, this MOSFET provides low on-resistance and high current handling capability, making it particularly suitable for high-efficiency and high-power electronic systems. The low threshold voltage and excellent on-performance of the IRL3402STRR-VB enable it to excel in applications that require high switching efficiency and low power consumption.
**IRL3402STRR-VB** is a high-performance N-Channel MOSFET in TO263 package. Designed with Trench technology, this MOSFET provides low on-resistance and high current handling capability, making it particularly suitable for high-efficiency and high-power electronic systems. The low threshold voltage and excellent on-performance of the IRL3402STRR-VB enable it to excel in applications that require high switching efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: IRL3402STRR-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(on))**:
- 9mΩ (VGS = 2.5V)
- 6mΩ (VGS = 4.5V)
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
- **Model**: IRL3402STRR-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(on))**:
- 9mΩ (VGS = 2.5V)
- 6mΩ (VGS = 4.5V)
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
The low on-resistance and high current handling capability of the IRL3402STRR-VB make it very effective in the following areas and modules:
1. Power Switch: In power switching applications, the IRL3402STRR-VB provides efficient switching performance for switching power supplies, DC-DC converters, and power adapters. Its low on-resistance reduces power consumption and heat generation, thereby improving system efficiency and stability.
2. Motor Drive: This MOSFET is suitable for motor control and drive systems such as electric vehicles, power tools, and industrial motor drive applications due to its high current handling capability and low on-resistance. It can stably control the power output of the motor, ensuring efficient operation and response of the motor.
3. DC-DC Converter: In DC-DC converter modules, the low on-resistance of the IRL3402STRR-VB helps improve conversion efficiency and reduce energy losses. This makes it suitable for various voltage regulation and voltage stabilization applications, improving overall performance.
4. **Power amplifier**: In power amplifier design, the low RDS(on) and high current handling capability provided by IRL3402STRR-VB can enhance the performance of the amplifier, and is particularly suitable for high-power audio amplifier and RF amplifier applications to provide stable power output.
5. **Battery management system**: In the battery management system, IRL3402STRR-VB can effectively control the battery charging and discharging process, and is suitable for battery protection, balancing and monitoring modules to help ensure the safety and long life of the battery system.
In summary, IRL3402STRR-VB is widely used in various electronic systems that require high efficiency and high power processing due to its excellent current handling capability and low on-resistance.
The low on-resistance and high current handling capability of the IRL3402STRR-VB make it very effective in the following areas and modules:
1. Power Switch: In power switching applications, the IRL3402STRR-VB provides efficient switching performance for switching power supplies, DC-DC converters, and power adapters. Its low on-resistance reduces power consumption and heat generation, thereby improving system efficiency and stability.
2. Motor Drive: This MOSFET is suitable for motor control and drive systems such as electric vehicles, power tools, and industrial motor drive applications due to its high current handling capability and low on-resistance. It can stably control the power output of the motor, ensuring efficient operation and response of the motor.
3. DC-DC Converter: In DC-DC converter modules, the low on-resistance of the IRL3402STRR-VB helps improve conversion efficiency and reduce energy losses. This makes it suitable for various voltage regulation and voltage stabilization applications, improving overall performance.
4. **Power amplifier**: In power amplifier design, the low RDS(on) and high current handling capability provided by IRL3402STRR-VB can enhance the performance of the amplifier, and is particularly suitable for high-power audio amplifier and RF amplifier applications to provide stable power output.
5. **Battery management system**: In the battery management system, IRL3402STRR-VB can effectively control the battery charging and discharging process, and is suitable for battery protection, balancing and monitoring modules to help ensure the safety and long life of the battery system.
In summary, IRL3402STRR-VB is widely used in various electronic systems that require high efficiency and high power processing due to its excellent current handling capability and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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