IRL3303STRL-VB Product details
Product introduction:
**IRL3303STRL-VB** is a high-performance N-channel MOSFET packaged in TO-263. This MOSFET is manufactured using Trench technology and is designed for applications that require high current and low on-resistance. Its maximum drain-source voltage (VDS) is 30V, and it can operate stably under high current loads. The maximum gate-source voltage (VGS) of the IRL3303STRL-VB is ±20V, and its threshold voltage (Vth) is 1.7V, enabling it to turn on quickly at a lower gate voltage. The on-resistance (RDS(ON)) of this MOSFET is 12mΩ at a gate voltage of 10V and 18mΩ at a gate voltage of 4.5V, which can effectively reduce power loss.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **Drain current (ID)**: 50A
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Technology**: Trench
- **Maximum power dissipation**: 75W
- **Junction-to-case thermal resistance (RθJC)**: 2.5°C/W
- **Operating temperature range**: -55°C to 175°C
Domain and module applications:
**IRL3303STRL-VB** MOSFET is widely used in various high-current and high-efficiency circuit designs with its high current carrying capacity and low on-resistance. Here are some specific application scenarios:
1. **Power Management and Switching**: Due to its low on-resistance and high current capability, IRL3303STRL-VB is an ideal choice for power management and switching circuits. For example, in an efficient DC-DC converter, it can effectively switch high-current loads, reduce power loss and improve conversion efficiency.
2. **Motor Control**: In motor drive circuits, IRL3303STRL-VB can be used as a switching element for motor starting and control applications that require high current. Its low on-resistance helps reduce the power loss of the motor and improve system performance and stability.
3. **Power Amplifier**: In high power amplifier design, IRL3303STRL-VB can be used as an output switching element. Its high current capability and low on-resistance enable it to provide reliable performance in power amplifiers, ensuring efficient signal transmission and amplification.
4. **Automotive Electronics**: In automotive electronic systems, IRL3303STRL-VB can be used for high power switching applications such as power seat adjustment, power window control, and other high current load control. Its high reliability and excellent current carrying capacity make it an ideal choice for automotive systems.
Through these application examples, the **IRL3303STRL-VB** MOSFET demonstrates its wide applicability and high performance in power management, motor control, power amplifiers, and automotive electronics.
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