IRL3202STRR-VB Product details
Product introduction:
The IRL3202STRR-VB is a high-performance N-channel power MOSFET in a TO-263 package. It has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±20V. The gate threshold voltage (Vth) of this MOSFET ranges from 0.5V to 1.5V, making it ideal for low-voltage drive applications. The IRL3202STRR-VB uses advanced trench technology (Trench) and has extremely low on-resistance, which is 9mΩ at VGS of 2.5V and 6mΩ at VGS of 4.5V, supporting a continuous drain current of up to 85A. These features enable this MOSFET to perform well in situations requiring high current and low power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 2.5V
- 6mΩ @ VGS = 4.5V
- **Continuous drain current (ID)**: 85A
- **Power dissipation**: 80W (max)
- **Operating temperature range**: -55°C to +175°C
- **Technology**: Trench technology
- **Input capacitance (Ciss)**: 6500 pF (typical)
- **Reverse recovery time (Trr)**: 25 ns
Domain and module applications:
1. **Low voltage power management**: The low gate drive voltage and low on-resistance of the IRL3202STRR-VB make it ideal for low voltage power management modules. In portable electronic devices and low voltage power converters, this MOSFET can achieve efficient power conversion and management, improving the energy efficiency and battery life of the equipment.
2. **Power tools**: In power tools and small motor drive systems, this MOSFET can be used as an efficient switching element. Its high current handling capability and low on-resistance help improve the efficiency of motor drives, reduce power losses, and provide stable performance.
3. **LED drive**: The IRL3202STRR-VB is suitable for efficient LED drive circuits. It can control large currents with low power consumption and provide stable LED drive current, thereby ensuring high efficiency and long life of LED lighting systems.
4. **Consumer Electronics**: In consumer electronics such as smartphones, tablets and other low-voltage applications, the low gate threshold voltage and low on-resistance of this MOSFET make it suitable for high-efficiency power switching and current control, enhancing the power efficiency and performance stability of the device.
Through its high current handling capability and low power consumption characteristics, the IRL3202STRR-VB provides a reliable and efficient solution for low-voltage power management, power tools, LED drivers and consumer electronics, meeting the needs of high performance and high energy efficiency.
Technical support:
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