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IRL3103STRR-VB Product details
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Product Introduction
**IRL3103STRR-VB** is a high-performance N-Channel MOSFET in TO263 package. This MOSFET adopts Trench technology and is designed to provide low on-resistance and high current handling capability. Its excellent electrical characteristics make it excel in electronic applications that require high efficiency and high power, and is very suitable for high power switching and power management fields.
**IRL3103STRR-VB** is a high-performance N-Channel MOSFET in TO263 package. This MOSFET adopts Trench technology and is designed to provide low on-resistance and high current handling capability. Its excellent electrical characteristics make it excel in electronic applications that require high efficiency and high power, and is very suitable for high power switching and power management fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: IRL3103STRR-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(on))**:
- 8mΩ (VGS = 4.5V)
- 6mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
- **Model**: IRL3103STRR-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(on))**:
- 8mΩ (VGS = 4.5V)
- 6mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The low on-resistance and high current handling capability of the IRL3103STRR-VB make it very effective in the following areas and modules:
1. Power switch: In power switch applications, the IRL3103STRR-VB provides efficient switching performance for switching power supplies, DC-DC converters, and power adapters. Its low on-resistance helps reduce energy loss and heat generation, improving the overall efficiency and stability of the system.
2. Motor drive: This MOSFET is capable of handling high currents and has a low on-resistance, making it suitable for motor control and drive applications such as electric vehicles, power tools, and industrial motor drive systems. It can provide stable and efficient motor control, enhancing the performance and reliability of the motor.
3. DC-DC converter: In DC-DC converter modules, the IRL3103STRR-VB can effectively reduce energy loss during the conversion process and improve conversion efficiency. Its excellent electrical characteristics make it suitable for various voltage regulation and power supply stabilization applications.
4. **Power Amplifier**: In power amplifier design, the high current handling capability and low RDS(on) provided by IRL3103STRR-VB can improve the performance of the amplifier, especially suitable for high-power audio amplifier and RF amplifier applications.
5. **Battery Management System**: In the battery management system, this MOSFET can effectively control the battery charging and discharging process to ensure the safety and long life of the battery. It is suitable for battery protection, balancing and monitoring modules to help improve the overall reliability of the system.
In short, IRL3103STRR-VB is widely used in various high-efficiency and high-power electronic systems with its superior current handling capability and low on-resistance.
The low on-resistance and high current handling capability of the IRL3103STRR-VB make it very effective in the following areas and modules:
1. Power switch: In power switch applications, the IRL3103STRR-VB provides efficient switching performance for switching power supplies, DC-DC converters, and power adapters. Its low on-resistance helps reduce energy loss and heat generation, improving the overall efficiency and stability of the system.
2. Motor drive: This MOSFET is capable of handling high currents and has a low on-resistance, making it suitable for motor control and drive applications such as electric vehicles, power tools, and industrial motor drive systems. It can provide stable and efficient motor control, enhancing the performance and reliability of the motor.
3. DC-DC converter: In DC-DC converter modules, the IRL3103STRR-VB can effectively reduce energy loss during the conversion process and improve conversion efficiency. Its excellent electrical characteristics make it suitable for various voltage regulation and power supply stabilization applications.
4. **Power Amplifier**: In power amplifier design, the high current handling capability and low RDS(on) provided by IRL3103STRR-VB can improve the performance of the amplifier, especially suitable for high-power audio amplifier and RF amplifier applications.
5. **Battery Management System**: In the battery management system, this MOSFET can effectively control the battery charging and discharging process to ensure the safety and long life of the battery. It is suitable for battery protection, balancing and monitoring modules to help improve the overall reliability of the system.
In short, IRL3103STRR-VB is widely used in various high-efficiency and high-power electronic systems with its superior current handling capability and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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