Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
70A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
70A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
70A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
IRL3103D2PBF-VB Detailed parameter description
- **Package**: TO220
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **Drain current (ID)**: 70A
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Technology**: Trench
- **Maximum power dissipation**: 300W
- **Junction-to-case thermal resistance (RθJC)**: <0.5°C/W
- **Operating temperature range**: -55°C to 175°C
Domain and module applications:
Application Examples of IRL3103D2PBF-VB
**IRL3103D2PBF-VB** The low on-resistance and high current carrying capacity of the MOSFET give it significant advantages in a variety of high-efficiency power management and switching applications. Here are some typical application areas:
1. **Power Management System**: In high-efficiency power adapters, DC-DC converters, and power modules, the low on-resistance of the IRL3103D2PBF-VB can significantly reduce power loss and improve power conversion efficiency. Especially in power management systems that need to handle high currents, the high efficiency of this MOSFET can ensure system stability and reliability.
2. **Motor Control**: In industrial motor drives, electric vehicle (EV) drive systems, and other high-current motor control applications, the IRL3103D2PBF-VB can support high current loads, reduce energy loss, and improve drive efficiency. Its low RDS(ON) helps reduce system heat generation, thereby improving system operating efficiency and life.
3. **Power Switch Applications**: Due to its high current carrying capability and low on-resistance, the IRL3103D2PBF-VB is suitable for various power switch applications such as power switches, load switches, and relay replacement. The high efficiency characteristics of this MOSFET enable it to operate reliably under high power loads, reduce switching losses, and improve overall system efficiency.
4. **Battery Management System (BMS)**: In battery management systems, especially in charge and discharge management of electric vehicles and energy storage systems, the IRL3103D2PBF-VB can be used for efficient battery control and protection. Its high current carrying capability and low on-resistance help improve system efficiency and ensure battery safety and long life.
Through these application examples, the **IRL3103D2PBF-VB** MOSFET demonstrates its wide applicability and excellent performance in high current, high power applications such as power management, motor control, power switching, and battery management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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