IRL3103D1STRL-VB Product details
Product introduction:
**IRL3103D1STRL-VB** is a high-performance N-Channel MOSFET in a TO263 package, designed for applications requiring high current and high efficiency. Its drain-source voltage (VDS) is **30V**, and its gate-source voltage (VGS) can reach **±20V**. The IRL3103D1STRL-VB uses advanced **Trench** technology to provide lower on-resistance and excellent current carrying capability. Its gate threshold voltage (Vth) is **1.7V**, and its on-resistance is **8mΩ** at **VGS = 4.5V**, and **6mΩ** at **VGS = 10V**. The maximum continuous drain current of this MOSFET can reach **70A**, making it an excellent performer in a variety of high-current applications.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications:
The high current capability and low on-resistance of the IRL3103D1STRL-VB make it suitable for multiple applications and modules, especially those that require high efficiency and high power handling:
1. Power Management Systems: In power supplies, power converters, and power management modules, the IRL3103D1STRL-VB provides efficient current control. Its low on-resistance helps reduce power losses and improve system efficiency, making it ideal for switching and control functions in high-power power applications.
2. DC-DC Converters: In a variety of DC-DC converter applications, such as consumer electronics, communication equipment, and industrial power supplies, the IRL3103D1STRL-VB can provide excellent performance. Its low RDS(ON) can significantly reduce energy losses and improve conversion efficiency, making it suitable for high-power density power modules.
3. **Motor Drive**: The high current handling capability of the IRL3103D1STRL-VB makes it an ideal motor drive MOSFET in electric vehicles, power tools, and industrial automation equipment. Its stable switching performance and low on-resistance ensure the reliability of motor control, especially in applications with high loads and high power requirements.
4. **Automotive Electronics**: In automotive battery management systems, electric power steering systems, and powertrain control, the IRL3103D1STRL-VB provides an efficient power management solution. Its low on-resistance and high current carrying capacity ensure the stability and efficiency of automotive electronic systems, meeting the needs of modern vehicles for high-power components.
In summary, the **IRL3103D1STRL-VB** is a high-current, high-efficiency MOSFET that is widely used in power management, DC-DC converters, motor drives, and automotive electronics. With its excellent on-resistance and high current capability, it can meet the needs of a variety of high-power applications, providing reliable performance and efficient power solutions.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image