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IRL3103D1SPBF-VB Product details
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Product Introduction
**IRL3103D1SPBF-VB** is a high-performance N-Channel MOSFET in TO263 package. It uses advanced Trench technology, with low on-resistance and high current handling capability. This MOSFET is designed for high-performance and high-reliability applications, can effectively handle large currents and low power consumption, and is suitable for various power management and switch control scenarios.
**IRL3103D1SPBF-VB** is a high-performance N-Channel MOSFET in TO263 package. It uses advanced Trench technology, with low on-resistance and high current handling capability. This MOSFET is designed for high-performance and high-reliability applications, can effectively handle large currents and low power consumption, and is suitable for various power management and switch control scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: IRL3103D1SPBF-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(on))**:
- 8mΩ (VGS = 4.5V)
- 6mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
- **Model**: IRL3103D1SPBF-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(on))**:
- 8mΩ (VGS = 4.5V)
- 6mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The excellent performance of the IRL3103D1SPBF-VB makes it play an important role in many fields and modules:
1. Power switch: In power switch applications, the IRL3103D1SPBF-VB can provide efficient switching performance and low power consumption, suitable for switching power supplies, DC-DC converters and power adapters. Its low on-resistance can reduce energy loss and heat generation, improving the overall efficiency of the system.
2. Motor drive: In motor control applications, the high current handling capability and low on-resistance of this MOSFET enable it to stably drive and control the motor, suitable for electric vehicles, power tools and industrial motor drive systems, ensuring efficient operation and reliability of the motor.
3. **DC-DC Converter**: In DC-DC converters, the low on-resistance and high current carrying capacity of IRL3103D1SPBF-VB can improve conversion efficiency, reduce energy loss and heat, and is suitable for voltage regulation and power supply stabilization modules.
4. **Power Amplifier**: In power amplifier design, the low RDS(on) and high current handling capability provided by this MOSFET enhance the performance of the amplifier, and is suitable for applications that require high power output, such as audio amplifiers and RF amplifiers.
5. **Battery Management System**: In battery management systems, IRL3103D1SPBF-VB can effectively control the charging and discharging process of the battery, and is suitable for battery protection and balancing modules, helping to ensure the safety and long life of the battery system.
Overall, IRL3103D1SPBF-VB is widely used in various electronic systems that require high efficiency and high power processing due to its low on-resistance and high current handling capability.
The excellent performance of the IRL3103D1SPBF-VB makes it play an important role in many fields and modules:
1. Power switch: In power switch applications, the IRL3103D1SPBF-VB can provide efficient switching performance and low power consumption, suitable for switching power supplies, DC-DC converters and power adapters. Its low on-resistance can reduce energy loss and heat generation, improving the overall efficiency of the system.
2. Motor drive: In motor control applications, the high current handling capability and low on-resistance of this MOSFET enable it to stably drive and control the motor, suitable for electric vehicles, power tools and industrial motor drive systems, ensuring efficient operation and reliability of the motor.
3. **DC-DC Converter**: In DC-DC converters, the low on-resistance and high current carrying capacity of IRL3103D1SPBF-VB can improve conversion efficiency, reduce energy loss and heat, and is suitable for voltage regulation and power supply stabilization modules.
4. **Power Amplifier**: In power amplifier design, the low RDS(on) and high current handling capability provided by this MOSFET enhance the performance of the amplifier, and is suitable for applications that require high power output, such as audio amplifiers and RF amplifiers.
5. **Battery Management System**: In battery management systems, IRL3103D1SPBF-VB can effectively control the charging and discharging process of the battery, and is suitable for battery protection and balancing modules, helping to ensure the safety and long life of the battery system.
Overall, IRL3103D1SPBF-VB is widely used in various electronic systems that require high efficiency and high power processing due to its low on-resistance and high current handling capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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