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IRL2703STRR-VB Product details
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Product Introduction
**IRL2703STRR-VB** is a high-performance N-Channel MOSFET in TO263 package. It uses Trench technology to provide low on-resistance and high current handling capability. This MOSFET is designed for various power management and switch control applications, with good electrical characteristics and high performance, suitable for electronic systems that require high performance and reliability.
**IRL2703STRR-VB** is a high-performance N-Channel MOSFET in TO263 package. It uses Trench technology to provide low on-resistance and high current handling capability. This MOSFET is designed for various power management and switch control applications, with good electrical characteristics and high performance, suitable for electronic systems that require high performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: IRL2703STRR-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(on))**:
- 18mΩ (VGS = 4.5V)
- 12mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
- **Model**: IRL2703STRR-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(on))**:
- 18mΩ (VGS = 4.5V)
- 12mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The low on-resistance and high current handling capability of the IRL2703STRR-VB enable it to excel in the following areas and modules:
1. Power switching and power management: In power switching and power management systems, the IRL2703STRR-VB provides high efficiency and low power consumption, making it particularly suitable for switching power supplies, DC-DC converters, and power adapters. This MOSFET can effectively reduce conduction losses and heat generation, improving the overall efficiency of the system.
2. Motor control: In motor drive and control applications, the high current handling capability of the IRL2703STRR-VB enables it to stably drive and control motors, making it suitable for electric vehicles, home appliances, and industrial motor drive systems, ensuring smooth operation and response of the motor.
3. DC-DC converters: In DC-DC converter modules, this MOSFET can reduce energy loss and heat during the conversion process, improve conversion efficiency, and is suitable for application scenarios such as voltage regulation and power supply stabilization.
4. **Power amplifier**: In power amplifier design, the low RDS(on) and high current handling capability provided by IRL2703STRR-VB enhance the performance of the amplifier and is suitable for audio and RF applications that require high power output.
5. **Battery management system**: In battery management systems, IRL2703STRR-VB can efficiently control the battery charge and discharge process, and is suitable for battery protection, balancing and monitoring modules to help ensure battery safety and service life.
In short, IRL2703STRR-VB is widely used in high-power, low-power and high-efficiency electronic systems with its excellent current handling capability and low on-resistance.
The low on-resistance and high current handling capability of the IRL2703STRR-VB enable it to excel in the following areas and modules:
1. Power switching and power management: In power switching and power management systems, the IRL2703STRR-VB provides high efficiency and low power consumption, making it particularly suitable for switching power supplies, DC-DC converters, and power adapters. This MOSFET can effectively reduce conduction losses and heat generation, improving the overall efficiency of the system.
2. Motor control: In motor drive and control applications, the high current handling capability of the IRL2703STRR-VB enables it to stably drive and control motors, making it suitable for electric vehicles, home appliances, and industrial motor drive systems, ensuring smooth operation and response of the motor.
3. DC-DC converters: In DC-DC converter modules, this MOSFET can reduce energy loss and heat during the conversion process, improve conversion efficiency, and is suitable for application scenarios such as voltage regulation and power supply stabilization.
4. **Power amplifier**: In power amplifier design, the low RDS(on) and high current handling capability provided by IRL2703STRR-VB enhance the performance of the amplifier and is suitable for audio and RF applications that require high power output.
5. **Battery management system**: In battery management systems, IRL2703STRR-VB can efficiently control the battery charge and discharge process, and is suitable for battery protection, balancing and monitoring modules to help ensure battery safety and service life.
In short, IRL2703STRR-VB is widely used in high-power, low-power and high-efficiency electronic systems with its excellent current handling capability and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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