中文
English
IRL2203STRLPBF-VB Product details
Back to previous pageProduct introduction：
IRL2203STRLPBF-VB MOSFET Product Introduction
**IRL2203STRLPBF-VB** is a high-performance N-channel MOSFET using Trench technology and packaged in TO-263. It is designed for applications that require high current and low on-resistance. The maximum drain-source voltage (VDS) of this MOSFET is 30V, the gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 1.7V, allowing it to turn on quickly at a lower gate voltage. The on-resistance (RDS(ON)) of the IRL2203STRLPBF-VB is 2.7mΩ at a gate voltage of 4.5V and 2.4mΩ at a gate voltage of 10V, supporting a drain current of up to 98A. This makes it an excellent performer in high-power, high-current applications, significantly reducing energy losses and improving system efficiency.
**IRL2203STRLPBF-VB** is a high-performance N-channel MOSFET using Trench technology and packaged in TO-263. It is designed for applications that require high current and low on-resistance. The maximum drain-source voltage (VDS) of this MOSFET is 30V, the gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 1.7V, allowing it to turn on quickly at a lower gate voltage. The on-resistance (RDS(ON)) of the IRL2203STRLPBF-VB is 2.7mΩ at a gate voltage of 4.5V and 2.4mΩ at a gate voltage of 10V, supporting a drain current of up to 98A. This makes it an excellent performer in high-power, high-current applications, significantly reducing energy losses and improving system efficiency.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IRL2203STRLPBF-VB Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **Drain current (ID)**: 98A
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Technology**: Trench
- **Maximum power dissipation**: 300W
- **Junction-to-case thermal resistance (RθJC)**: <0.6°C/W
- **Operating temperature range**: -55°C to 175°C
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **Drain current (ID)**: 98A
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Technology**: Trench
- **Maximum power dissipation**: 300W
- **Junction-to-case thermal resistance (RθJC)**: <0.6°C/W
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
Application Examples of IRL2203STRLPBF-VB
**IRL2203STRLPBF-VB** MOSFET has significant advantages in a variety of high-efficiency power management and switching applications due to its low on-resistance and high current carrying capability. Here are several typical application areas:
1. **Power Management System**: In DC-DC converters and power modules, the low on-resistance of IRL2203STRLPBF-VB can significantly reduce power losses, thereby improving overall efficiency. This makes it very suitable for high-efficiency power adapters, server power supplies, and high-power power management systems.
2. **Motor Control**: In motor drive applications that require high current and high power, such as industrial motor drives and electric vehicle (EV) drive systems, IRL2203STRLPBF-VB can provide stable high current support, and low RDS(ON) helps reduce energy loss and heat in the motor control process.
3. **Power Switch**: Due to its high current carrying capability and low on-resistance, the IRL2203STRLPBF-VB is suitable for various power switch applications such as power switch, load switch and relay replacement. Its high-efficiency switching characteristics enable the system to operate reliably under high load conditions.
4. **Battery Management System (BMS)**: In high-power battery management systems, especially in electric vehicles and energy storage systems, the IRL2203STRLPBF-VB can be used to optimize the charging and discharging process. Its high current capability and low on-resistance can improve system efficiency and ensure the safety and long life of the battery.
Through these application examples, the **IRL2203STRLPBF-VB** MOSFET demonstrates its wide applicability and excellent performance in high-current, high-power applications such as power management, motor control, power switching and battery management.
**IRL2203STRLPBF-VB** MOSFET has significant advantages in a variety of high-efficiency power management and switching applications due to its low on-resistance and high current carrying capability. Here are several typical application areas:
1. **Power Management System**: In DC-DC converters and power modules, the low on-resistance of IRL2203STRLPBF-VB can significantly reduce power losses, thereby improving overall efficiency. This makes it very suitable for high-efficiency power adapters, server power supplies, and high-power power management systems.
2. **Motor Control**: In motor drive applications that require high current and high power, such as industrial motor drives and electric vehicle (EV) drive systems, IRL2203STRLPBF-VB can provide stable high current support, and low RDS(ON) helps reduce energy loss and heat in the motor control process.
3. **Power Switch**: Due to its high current carrying capability and low on-resistance, the IRL2203STRLPBF-VB is suitable for various power switch applications such as power switch, load switch and relay replacement. Its high-efficiency switching characteristics enable the system to operate reliably under high load conditions.
4. **Battery Management System (BMS)**: In high-power battery management systems, especially in electric vehicles and energy storage systems, the IRL2203STRLPBF-VB can be used to optimize the charging and discharging process. Its high current capability and low on-resistance can improve system efficiency and ensure the safety and long life of the battery.
Through these application examples, the **IRL2203STRLPBF-VB** MOSFET demonstrates its wide applicability and excellent performance in high-current, high-power applications such as power management, motor control, power switching and battery management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
