中文
English
IRL1104S-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**IRL1104S-VB** is a high performance N-Channel MOSFET in TO263 package. It uses Trench technology to provide low on-resistance and high current handling capability. This MOSFET is suitable for a variety of high power switching and power management applications, and its excellent performance makes it an ideal choice for high-efficiency circuit design.
**IRL1104S-VB** is a high performance N-Channel MOSFET in TO263 package. It uses Trench technology to provide low on-resistance and high current handling capability. This MOSFET is suitable for a variety of high power switching and power management applications, and its excellent performance makes it an ideal choice for high-efficiency circuit design.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: IRL1104S-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(on))**:
- 6mΩ (VGS = 4.5V)
- 5mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Model**: IRL1104S-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(on))**:
- 6mΩ (VGS = 4.5V)
- 5mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The high conductivity and low on-resistance of the IRL1104S-VB make it suitable for the following areas and modules:
1. Power management systems: In power switches and power converters, the IRL1104S-VB is able to provide high efficiency and low power consumption, and is particularly suitable for power management applications that require high current, such as power adapters and voltage regulators.
2. Motor drivers: Due to its high current handling capability and low on-resistance, this MOSFET performs well in motor drive circuits and is suitable for motor control and regulation applications to improve the operating efficiency and stability of the motor.
3. DC-DC converters: In DC-DC converters, the low on-resistance and high current capability of the IRL1104S-VB can significantly improve conversion efficiency and reduce energy losses, and is widely used in voltage conversion and regulation modules.
4. **Power amplifier**: In power amplifiers, the high current carrying capacity and low RDS(on) provided by IRL1104S-VB can enhance the efficiency of the amplifier and is suitable for high-performance amplifier designs that require high current.
5. **Battery management system**: In battery management systems, this MOSFET can efficiently control the battery charging and discharging process to ensure the safety and efficiency of the system, and is suitable for battery protection and balancing modules.
Overall, IRL1104S-VB is widely used in various high-power, high-efficiency electronic devices and systems due to its superior current handling capability and low on-resistance.
The high conductivity and low on-resistance of the IRL1104S-VB make it suitable for the following areas and modules:
1. Power management systems: In power switches and power converters, the IRL1104S-VB is able to provide high efficiency and low power consumption, and is particularly suitable for power management applications that require high current, such as power adapters and voltage regulators.
2. Motor drivers: Due to its high current handling capability and low on-resistance, this MOSFET performs well in motor drive circuits and is suitable for motor control and regulation applications to improve the operating efficiency and stability of the motor.
3. DC-DC converters: In DC-DC converters, the low on-resistance and high current capability of the IRL1104S-VB can significantly improve conversion efficiency and reduce energy losses, and is widely used in voltage conversion and regulation modules.
4. **Power amplifier**: In power amplifiers, the high current carrying capacity and low RDS(on) provided by IRL1104S-VB can enhance the efficiency of the amplifier and is suitable for high-performance amplifier designs that require high current.
5. **Battery management system**: In battery management systems, this MOSFET can efficiently control the battery charging and discharging process to ensure the safety and efficiency of the system, and is suitable for battery protection and balancing modules.
Overall, IRL1104S-VB is widely used in various high-power, high-efficiency electronic devices and systems due to its superior current handling capability and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
