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IRL1104STRR-VB Product details
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The IRL1104STRR-VB is a high-performance single N-channel MOSFET in a TO263 package, designed for high current and high power applications. It features a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, with a gate threshold voltage (Vth) of 2.5V. This MOSFET uses advanced trench technology to provide low on-resistance (RDS(ON)), 6mΩ at VGS=4.5V and 5mΩ at VGS=10V. It is capable of supporting up to 100A of continuous drain current (ID), making it ideal for high current, high efficiency applications.
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**IRL1104STRR-VB
The IRL1104STRR-VB is a high-performance single N-channel MOSFET in a TO263 package, designed for high current and high power applications. It features a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, with a gate threshold voltage (Vth) of 2.5V. This MOSFET uses advanced trench technology to provide low on-resistance (RDS(ON)), 6mΩ at VGS=4.5V and 5mΩ at VGS=10V. It is capable of supporting up to 100A of continuous drain current (ID), making it ideal for high current, high efficiency applications.
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**IRL1104STRR-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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- **Package type:** TO263
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 40V
- **Gate-source voltage (VGS):** ±20V
- **Gate threshold voltage (Vth):** 2.5V
- **On-resistance (RDS(ON)):** 6mΩ @ VGS=4.5V
- **On-resistance (RDS(ON)):** 5mΩ @ VGS=10V
- **Maximum drain current (ID):** 100A
- **Technology type:** Trench
- **Maximum power dissipation:** 130W
- **Input capacitance (Ciss):** 3000pF (typical)
- **Reverse recovery time (trr):** 150ns (typ.)
- **Operating temperature range: ** -55°C to 175°C
- **Package pin count: ** 3
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**IRL1104STRR-VB
- **Package type:** TO263
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 40V
- **Gate-source voltage (VGS):** ±20V
- **Gate threshold voltage (Vth):** 2.5V
- **On-resistance (RDS(ON)):** 6mΩ @ VGS=4.5V
- **On-resistance (RDS(ON)):** 5mΩ @ VGS=10V
- **Maximum drain current (ID):** 100A
- **Technology type:** Trench
- **Maximum power dissipation:** 130W
- **Input capacitance (Ciss):** 3000pF (typical)
- **Reverse recovery time (trr):** 150ns (typ.)
- **Operating temperature range: ** -55°C to 175°C
- **Package pin count: ** 3
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**IRL1104STRR-VB
Domain and module applications：
Examples: **
1. **Electric Vehicles and Battery Management Systems:** The IRL1104STRR-VB effectively controls battery current and electric drive systems in electric vehicles. Its high current handling capability and low on-resistance make it an excellent performer in battery management and motor control, maintaining system efficiency and stability under high loads.
2. **DC-DC Converters and Power Management:** The low on-resistance of this MOSFET helps improve power efficiency in DC-DC converters and high-efficiency power management systems. It is suitable for applications that require high current conversion and low power loss, such as server power supplies, communication equipment, and industrial power modules.
3. **Motor Control Systems:** The IRL1104STRR-VB can be used in motor control applications to provide high current drive and switching capabilities. This includes industrial automation equipment, power tools, and inverters, optimizing motor performance and response speed through efficient current switching and control.
4. **Solar Inverters and Energy Storage:** In solar inverters and energy storage systems, the efficient switching characteristics of this MOSFET can significantly improve energy conversion efficiency. It can handle high currents from solar panels, improving the overall performance and reliability of inverters and energy storage systems.
1. **Electric Vehicles and Battery Management Systems:** The IRL1104STRR-VB effectively controls battery current and electric drive systems in electric vehicles. Its high current handling capability and low on-resistance make it an excellent performer in battery management and motor control, maintaining system efficiency and stability under high loads.
2. **DC-DC Converters and Power Management:** The low on-resistance of this MOSFET helps improve power efficiency in DC-DC converters and high-efficiency power management systems. It is suitable for applications that require high current conversion and low power loss, such as server power supplies, communication equipment, and industrial power modules.
3. **Motor Control Systems:** The IRL1104STRR-VB can be used in motor control applications to provide high current drive and switching capabilities. This includes industrial automation equipment, power tools, and inverters, optimizing motor performance and response speed through efficient current switching and control.
4. **Solar Inverters and Energy Storage:** In solar inverters and energy storage systems, the efficient switching characteristics of this MOSFET can significantly improve energy conversion efficiency. It can handle high currents from solar panels, improving the overall performance and reliability of inverters and energy storage systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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