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IRL1004S-VB Product details
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IRL1004S-VB MOSFET Product Introduction
**IRL1004S-VB** is a high-performance N-channel MOSFET using Trench technology and packaged in TO-263. It has extremely low on-resistance and high current carrying capacity, and is designed for high-efficiency switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 40V, the gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 2.5V, ensuring its stable operation in various power management systems. The IRL1004S-VB has an on-resistance of 6mΩ at a gate voltage of 4.5V and 5mΩ at a gate voltage of 10V, supporting a drain current of up to 100A. This makes the IRL1004S-VB an excellent performer in applications requiring high current and low on-resistance, making it an ideal switching element.
**IRL1004S-VB** is a high-performance N-channel MOSFET using Trench technology and packaged in TO-263. It has extremely low on-resistance and high current carrying capacity, and is designed for high-efficiency switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 40V, the gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 2.5V, ensuring its stable operation in various power management systems. The IRL1004S-VB has an on-resistance of 6mΩ at a gate voltage of 4.5V and 5mΩ at a gate voltage of 10V, supporting a drain current of up to 100A. This makes the IRL1004S-VB an excellent performer in applications requiring high current and low on-resistance, making it an ideal switching element.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IRL1004S-VB Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **Drain current (ID)**: 100A
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Technology**: Trench
- **Maximum power dissipation**: 200W
- **Junction-to-case thermal resistance (RθJC)**: <1.0°C/W
- **Operating temperature range**: -55°C to 175°C
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **Drain current (ID)**: 100A
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Technology**: Trench
- **Maximum power dissipation**: 200W
- **Junction-to-case thermal resistance (RθJC)**: <1.0°C/W
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
Application Examples of IRL1004S-VB
**IRL1004S-VB** The high current carrying capability and low on-resistance of the MOSFET make it excellent in a variety of high-efficiency power management and switching applications. Here are a few typical application areas:
1. **Power Converter**: The IRL1004S-VB is suitable for switching applications in DC-DC converters, especially where low on-resistance is required to reduce power losses. This makes it an ideal choice for automotive power modules, portable device power supplies, and high-efficiency power adapters.
2. **Motor Drive**: In medium to high power motor control systems, this MOSFET can efficiently drive motors for industrial automation, robotic systems, and power tools. Due to its high current capability and low power consumption, the IRL1004S-VB can effectively reduce energy losses in the motor drive process.
3. **Power Switching Application**: The IRL1004S-VB is also suitable for various power switching applications, such as switching control of high current loads and relay replacement. Its excellent switching performance and low on-resistance can improve system efficiency and reduce heat and power consumption.
4. **Battery Management System (BMS)**: In battery management systems, especially in electric vehicles (EVs) and energy storage systems, IRL1004S-VB can be used for battery protection and charge and discharge control. Its high current carrying capacity and low on-resistance help improve system efficiency, extend battery life, and optimize the charging process.
Through these application examples, **IRL1004S-VB** MOSFET demonstrates its wide applicability and excellent performance in high-current, high-power applications such as power conversion, motor control, power switching, and battery management.
**IRL1004S-VB** The high current carrying capability and low on-resistance of the MOSFET make it excellent in a variety of high-efficiency power management and switching applications. Here are a few typical application areas:
1. **Power Converter**: The IRL1004S-VB is suitable for switching applications in DC-DC converters, especially where low on-resistance is required to reduce power losses. This makes it an ideal choice for automotive power modules, portable device power supplies, and high-efficiency power adapters.
2. **Motor Drive**: In medium to high power motor control systems, this MOSFET can efficiently drive motors for industrial automation, robotic systems, and power tools. Due to its high current capability and low power consumption, the IRL1004S-VB can effectively reduce energy losses in the motor drive process.
3. **Power Switching Application**: The IRL1004S-VB is also suitable for various power switching applications, such as switching control of high current loads and relay replacement. Its excellent switching performance and low on-resistance can improve system efficiency and reduce heat and power consumption.
4. **Battery Management System (BMS)**: In battery management systems, especially in electric vehicles (EVs) and energy storage systems, IRL1004S-VB can be used for battery protection and charge and discharge control. Its high current carrying capacity and low on-resistance help improve system efficiency, extend battery life, and optimize the charging process.
Through these application examples, **IRL1004S-VB** MOSFET demonstrates its wide applicability and excellent performance in high-current, high-power applications such as power conversion, motor control, power switching, and battery management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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