IRL1004SPBF-VB Product details
Product introduction:
**IRL1004SPBF-VB** is a high-performance TO263 packaged N-Channel MOSFET designed for high current and high efficiency applications. Its drain-source voltage (VDS) is **40V**, gate-source voltage (VGS) is **±20V**, and it uses advanced **Trench** technology, which has extremely low on-resistance and high current carrying capacity. IRL1004SPBF-VB has a gate threshold voltage (Vth) of **2.5V**, and an on-resistance of **6mΩ** and **5mΩ**, tested at **VGS = 4.5V** and **VGS = 10V**, respectively, and its maximum continuous drain current reaches **100A**. These features make it very suitable for applications that require high efficiency and high power handling.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications:
**IRL1004SPBF-VB** is widely used in the following fields and modules with its excellent performance and high current capability:
1. **Power management system**: In high-efficiency power conversion and management systems, such as server power modules and uninterruptible power supply (UPS) systems, IRL1004SPBF-VB can effectively reduce power loss and improve energy efficiency. Its low on-resistance makes the power system more efficient and stable, and is suitable for power management units that require high current handling.
2. **DC-DC converter**: This MOSFET performs well in DC-DC converters, especially in applications that require high current and high-efficiency conversion, such as power management modules for laptops, mobile devices and other electronic products. It can effectively reduce power loss and improve power conversion efficiency, and is suitable for high-density power conversion designs.
3. **Motor control**: The high current handling capability of IRL1004SPBF-VB makes it suitable for motor drive modules, including electric vehicles, power tools and industrial automation systems. Its efficient switching performance and high current carrying capacity ensure stable operation and efficient control of the motor, especially in drive applications requiring high current and high power.
4. **Automotive Electronics**: In the field of automotive electronics, especially in electric power steering systems, battery management systems and power system control, IRL1004SPBF-VB provides an efficient power management solution. It can handle the high current requirements in automotive systems, improve the reliability and stability of the system, and is suitable for various high-performance applications in modern cars.
In summary, **IRL1004SPBF-VB** is a high-performance, high-current handling MOSFET that is widely used in power management, motor control and automotive electronics to meet the needs of high-power applications, providing reliable performance and efficient power solutions.
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