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IRL1004L-VB Product details
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The IRL1004L-VB is a high-performance single N-channel MOSFET in a TO262 package, designed for high current and high power applications. The MOSFET provides a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, with a gate threshold voltage (Vth) of 3.3V. It uses trench technology and has an extremely low on-resistance (RDS(ON)) of 1.7mΩ at VGS=10V, supporting a continuous drain current (ID) of up to 150A. These features make the IRL1004L-VB an ideal choice for applications requiring high current and high efficiency, such as power management, motor drives, and electric vehicles.
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**IRL1004L-VB
The IRL1004L-VB is a high-performance single N-channel MOSFET in a TO262 package, designed for high current and high power applications. The MOSFET provides a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, with a gate threshold voltage (Vth) of 3.3V. It uses trench technology and has an extremely low on-resistance (RDS(ON)) of 1.7mΩ at VGS=10V, supporting a continuous drain current (ID) of up to 150A. These features make the IRL1004L-VB an ideal choice for applications requiring high current and high efficiency, such as power management, motor drives, and electric vehicles.
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**IRL1004L-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 3.3V | 150A | 1.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 3.3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 3.3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
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- **Package type:** TO262
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 40V
- **Gate-source voltage (VGS):** ±20V
- **Gate threshold voltage (Vth):** 3.3V
- **On-resistance (RDS(ON)):** 1.7mΩ @ VGS=10V
- **Maximum drain current (ID):** 150A
- **Technology type:** Trench
- **Maximum power dissipation:** 260W
- **Input capacitance (Ciss):** 5200pF (typical)
- **Reverse recovery time (trr):** 120ns (typical)
- **Operating temperature range:** -55°C to 175°C
- **Package pin count:** 3
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**IRL1004L-VB
- **Package type:** TO262
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 40V
- **Gate-source voltage (VGS):** ±20V
- **Gate threshold voltage (Vth):** 3.3V
- **On-resistance (RDS(ON)):** 1.7mΩ @ VGS=10V
- **Maximum drain current (ID):** 150A
- **Technology type:** Trench
- **Maximum power dissipation:** 260W
- **Input capacitance (Ciss):** 5200pF (typical)
- **Reverse recovery time (trr):** 120ns (typical)
- **Operating temperature range:** -55°C to 175°C
- **Package pin count:** 3
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**IRL1004L-VB
Domain and module applications：
Examples: **
1. **Electric Vehicles:** In electric vehicles, the IRL1004L-VB can be used in battery management systems and electric drive systems. The high current handling capability and low on-resistance of this MOSFET enable it to efficiently control the current flow of the motor and battery, ensuring the stability and efficiency of the vehicle under high load conditions.
2. **Power Management System:** The IRL1004L-VB excels in DC-DC converters, power modules, and high-efficiency power management systems. Its low on-resistance and high current capability help reduce power loss and improve power conversion efficiency, making it suitable for computer power supplies, communication equipment, and other high-power electronic devices.
3. **Industrial Motor Control:** This MOSFET can be used for motor drive and switch control in industrial automation systems. It is suitable for driving high-power power tools, electric machinery, and inverters, providing stable and reliable current control, and improving the performance and efficiency of industrial equipment.
4. **Solar Inverter:** In solar inverters, the IRL1004L-VB is able to handle high currents from solar panels, ensuring efficient power conversion and energy management. Its excellent switching performance and low on-resistance help improve the overall efficiency of the inverter and enhance the reliability of the solar power generation system.
1. **Electric Vehicles:** In electric vehicles, the IRL1004L-VB can be used in battery management systems and electric drive systems. The high current handling capability and low on-resistance of this MOSFET enable it to efficiently control the current flow of the motor and battery, ensuring the stability and efficiency of the vehicle under high load conditions.
2. **Power Management System:** The IRL1004L-VB excels in DC-DC converters, power modules, and high-efficiency power management systems. Its low on-resistance and high current capability help reduce power loss and improve power conversion efficiency, making it suitable for computer power supplies, communication equipment, and other high-power electronic devices.
3. **Industrial Motor Control:** This MOSFET can be used for motor drive and switch control in industrial automation systems. It is suitable for driving high-power power tools, electric machinery, and inverters, providing stable and reliable current control, and improving the performance and efficiency of industrial equipment.
4. **Solar Inverter:** In solar inverters, the IRL1004L-VB is able to handle high currents from solar panels, ensuring efficient power conversion and energy management. Its excellent switching performance and low on-resistance help improve the overall efficiency of the inverter and enhance the reliability of the solar power generation system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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