IRFZ48RSP-VB Product details
Product introduction:
**IRFZ48RSP-VB** is a high-performance N-channel MOSFET using Trench technology and packaged in TO-263. This MOSFET is designed for high-current and high-power switching applications, providing excellent power control and conversion efficiency. Its maximum drain-source voltage (VDS) is 60V and the gate-source voltage (VGS) range is ±20V, ensuring that it can operate stably in a variety of power management systems. The threshold voltage (Vth) is 1.7V, which makes it have lower driving voltage requirements. The on-resistance (RDS(ON)) of IRFZ48RSP-VB is 12mΩ at a gate voltage of 4.5V and 11mΩ at a gate voltage of 10V. It can withstand a drain current of up to 75A, which makes it excel in high-current applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **Drain current (ID)**: 75A
- **RDS(ON) (on-resistance)**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Technology**: Trench
- **Maximum power dissipation**: 150W
- **Junction-to-case thermal resistance (RθJC)**: <1.0°C/W
- **Operating temperature range**: -55°C to 175°C
Domain and module applications:
**IRFZ48RSP-VB** MOSFET is widely used in various high-power and high-current application scenarios due to its high current carrying capacity and low on-resistance. Here are several typical application examples:
1. **Power conversion and DC-DC converter**: This MOSFET is an ideal choice in switching power supplies and DC-DC converters, especially in buck and boost circuits. Its low on-resistance helps reduce power loss and improve power efficiency, and is suitable for high-efficiency power modules, regulated power supplies, and various power converters.
2. **Motor drive system**: The 75A drain current capability of IRFZ48RSP-VB makes it suitable for driving medium to high-power motors, such as industrial automation equipment, power tools, and robots. It is able to provide stable current drive to ensure efficient operation of the motor and reliability of the system.
3. **Battery Management System (BMS)**: In electric vehicles (EV) and energy storage systems, the IRFZ48RSP-VB can be used for battery management and protection systems. Its high current capability and low on-resistance help improve charging and discharging efficiency, protect the battery system, and extend battery life.
4. **Consumer Electronics and Home Appliances**: In consumer electronics and home appliances, such as audio amplifiers and power tools, the IRFZ48RSP-VB can be used as a high-power switching element to provide efficient power control and ensure the stability and reliability of the equipment.
Through these application examples, the IRFZ48RSP-VB MOSFET demonstrates its wide applicability and excellent performance in a variety of high-power power control and switching applications.
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