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IRFZ48NLPBF-VB Product details
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1. IRFZ48NLPBF-VB Product Introduction
IRFZ48NLPBF-VB is a high-performance single N-channel MOSFET in TO-262 package. This MOSFET is designed for high current and high efficiency applications, with a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its turn-on threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 3mΩ at VGS=10V, and it can carry a continuous drain current (ID) of up to 210A. Using advanced Trench technology, IRFZ48NLPBF-VB provides excellent switching performance and thermal management capabilities, and is suitable for applications that need to handle high current and high efficiency.
IRFZ48NLPBF-VB is a high-performance single N-channel MOSFET in TO-262 package. This MOSFET is designed for high current and high efficiency applications, with a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its turn-on threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 3mΩ at VGS=10V, and it can carry a continuous drain current (ID) of up to 210A. Using advanced Trench technology, IRFZ48NLPBF-VB provides excellent switching performance and thermal management capabilities, and is suitable for applications that need to handle high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
II. Detailed parameter description of IRFZ48NLPBF-VB
| **Parameter** | **Value** |
|---------------------|--------------------------------|
| **Package** | TO262 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Turn-on threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 3mΩ @ VGS = 10V |
| **Drain current (ID)** | 210A |
| **Technology type** | Trench |
| **Maximum power dissipation** | 124W |
| **Operating temperature range** | -55°C to +175°C |
| **Parameter** | **Value** |
|---------------------|--------------------------------|
| **Package** | TO262 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Turn-on threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 3mΩ @ VGS = 10V |
| **Drain current (ID)** | 210A |
| **Technology type** | Trench |
| **Maximum power dissipation** | 124W |
| **Operating temperature range** | -55°C to +175°C |
Domain and module applications：
III. Application fields and module examples of IRFZ48NLPBF-VB
1. **High-power switching power supply**: The IRFZ48NLPBF-VB is very suitable for high-power switching power supplies and DC-DC converters due to its extremely low on-resistance and high current handling capability. It can significantly improve power conversion efficiency and reduce power loss while ensuring system stability under high load conditions.
2. **Motor drive system**: The high current carrying capacity of this MOSFET makes it an ideal choice for motor control applications, including electric vehicles, power tools, and industrial motor drive systems. Its low on-resistance can improve the overall efficiency of the motor system and reduce energy loss and heat generation.
3. **Battery management system**: In battery management systems, such as cell balancing and protection modules, the IRFZ48NLPBF-VB can effectively handle high current loads. Its high current capability and excellent thermal management characteristics make it suitable for stable control during battery charging and discharging.
4. **Solar Inverter**: In high-power inverter applications such as solar inverters, the low on-resistance and high current handling capability of the IRFZ48NLPBF-VB help improve the overall efficiency of the inverter, optimize the energy conversion and power transmission process, and meet the high power requirements in renewable energy systems.
1. **High-power switching power supply**: The IRFZ48NLPBF-VB is very suitable for high-power switching power supplies and DC-DC converters due to its extremely low on-resistance and high current handling capability. It can significantly improve power conversion efficiency and reduce power loss while ensuring system stability under high load conditions.
2. **Motor drive system**: The high current carrying capacity of this MOSFET makes it an ideal choice for motor control applications, including electric vehicles, power tools, and industrial motor drive systems. Its low on-resistance can improve the overall efficiency of the motor system and reduce energy loss and heat generation.
3. **Battery management system**: In battery management systems, such as cell balancing and protection modules, the IRFZ48NLPBF-VB can effectively handle high current loads. Its high current capability and excellent thermal management characteristics make it suitable for stable control during battery charging and discharging.
4. **Solar Inverter**: In high-power inverter applications such as solar inverters, the low on-resistance and high current handling capability of the IRFZ48NLPBF-VB help improve the overall efficiency of the inverter, optimize the energy conversion and power transmission process, and meet the high power requirements in renewable energy systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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