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IRFZ46ZS-VB Product details

Product introduction:

IRFZ46ZS-VB MOSFET Product Introduction

**IRFZ46ZS-VB** is a high-performance N-channel MOSFET based on Trench technology, packaged in TO-263, designed for high current and high power switching applications. Its maximum drain-source voltage (VDS) is 60V, the gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 1.7V, providing stable gate drive voltage requirements. IRFZ46ZS-VB has extremely low on-resistance of 12mΩ (VGS=4.5V) and 11mΩ (VGS=10V), respectively, and supports a drain current capability of up to 75A, which can significantly improve power transmission efficiency and reduce losses. It is very suitable for various power conversion and control application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 1.7V 75A 11mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 1.7V 75A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 1.7V 75A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
IRFZ46ZS-VB Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **Drain current (ID)**: 75A
- **RDS(ON) (on-resistance)**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Technology**: Trench
- **Maximum power dissipation**: 150W
- **Junction-to-case thermal resistance (RθJC)**: <1.0°C/W
- **Operating temperature range**: -55°C to 175°C

Domain and module applications:

Application examples of IRFZ46ZS-VB

**IRFZ46ZS-VB** MOSFET is suitable for a wide range of high-power applications due to its excellent current carrying capacity and low on-resistance. Here are several typical application areas:

1. **Power conversion and DC-DC converter**: This MOSFET is commonly used in the design of switching power supplies and DC-DC converters, especially in buck and boost circuits. Its low on-resistance effectively reduces conduction losses and improves overall energy efficiency, so it is often used in high-efficiency power modules, server power supplies and battery chargers.

2. **Motor control system**: IRFZ46ZS-VB is suitable for motor drive applications, especially high-power motor controllers. Its high drain current of 75A enables it to carry large currents, which is suitable for scenarios such as industrial automation equipment, robots, and power tools to ensure smooth and efficient drive control.

3. **Battery Management System (BMS)**: In electric vehicles (EV) and energy storage systems, the IRFZ46ZS-VB can be used as the main switching element in the battery management system. Its low on-resistance and high current carrying capacity can effectively improve charging efficiency, extend battery life, and reduce energy waste.

4. **Consumer Electronic Devices and Home Appliances**: In high-power consumer electronic devices and home appliances, such as audio amplifiers and power tools, this MOSFET can be used as a switching element to provide efficient and low-loss power control for the equipment, ensuring the stability and reliability of the equipment operation.

Through these application examples, the IRFZ46ZS-VB MOSFET demonstrates its wide applicability and excellent performance in various high-current, high-power control fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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