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IRFZ44ZSPBF-VB Product details
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Product Introduction:
IRFZ44ZSPBF-VB is an N-channel power MOSFET designed with advanced Trench technology, suitable for high-efficiency switching applications. Its compact TO263 package provides better heat dissipation, supports high current handling capabilities, and can perform well in various power management applications. The device provides a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of 20V, and a maximum on-current of 75A, with low on-resistance to ensure low losses at different gate drive voltages.
IRFZ44ZSPBF-VB is an N-channel power MOSFET designed with advanced Trench technology, suitable for high-efficiency switching applications. Its compact TO263 package provides better heat dissipation, supports high current handling capabilities, and can perform well in various power management applications. The device provides a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of 20V, and a maximum on-current of 75A, with low on-resistance to ensure low losses at different gate drive voltages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench MOSFET technology
- **Operating temperature range**: -55°C to 175°C
- **Switching time**:
- Turn-on time: 10ns (typical)
- Turn-off time: 30ns (typical)
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench MOSFET technology
- **Operating temperature range**: -55°C to 175°C
- **Switching time**:
- Turn-on time: 10ns (typical)
- Turn-off time: 30ns (typical)
Domain and module applications：
Applications and modules:
1. **Automotive electronics**: This MOSFET is suitable for use in automotive electronic systems, such as power seat control, automotive lighting, fan drivers and other applications. Its high current handling capability and low on-resistance enable it to operate efficiently in these power-intensive environments and reduce energy consumption.
2. **DC-DC converter**: Due to its 60V VDS and low on-resistance, it is very suitable for use in small and medium power DC-DC converters, which can efficiently convert electrical energy and ensure high conversion efficiency of the system.
3. **Industrial power management**: In power management modules in industrial equipment, this MOSFET can be used for efficient load switching, relay driving and other occasions. Its high current capacity and fast switching capability ensure the stability and response speed of the equipment.
4. **Consumer electronics**: In consumer electronics such as TVs and home appliances, it is used to control motors or power switches. Its low RDS(ON) characteristics help reduce power consumption and improve the overall energy efficiency of the product.
This MOSFET device is not only suitable for high power applications, but also ensures high efficiency at high switching frequencies. It is widely used in occasions requiring efficient switching and current handling.
1. **Automotive electronics**: This MOSFET is suitable for use in automotive electronic systems, such as power seat control, automotive lighting, fan drivers and other applications. Its high current handling capability and low on-resistance enable it to operate efficiently in these power-intensive environments and reduce energy consumption.
2. **DC-DC converter**: Due to its 60V VDS and low on-resistance, it is very suitable for use in small and medium power DC-DC converters, which can efficiently convert electrical energy and ensure high conversion efficiency of the system.
3. **Industrial power management**: In power management modules in industrial equipment, this MOSFET can be used for efficient load switching, relay driving and other occasions. Its high current capacity and fast switching capability ensure the stability and response speed of the equipment.
4. **Consumer electronics**: In consumer electronics such as TVs and home appliances, it is used to control motors or power switches. Its low RDS(ON) characteristics help reduce power consumption and improve the overall energy efficiency of the product.
This MOSFET device is not only suitable for high power applications, but also ensures high efficiency at high switching frequencies. It is widely used in occasions requiring efficient switching and current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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