IRFZ44RSTRR-VB Product details
Product introduction:
The IRFZ44RSTRR-VB is a high-performance N-channel MOSFET in a TO-263 package. This MOSFET is designed for high-efficiency energy switching applications and has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. It uses advanced trench technology to provide low on-resistance of 35mΩ and 32mΩ (at VGS of 4.5V and 10V), respectively, which can maintain low power consumption under high current conditions. The gate threshold voltage (Vth) of the IRFZ44RSTRR-VB is 1.7V, which gives it good switching response characteristics and is suitable for a variety of high-efficiency power management and switching control applications.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 50A
- **Power dissipation**: 94W (max)
- **Operating temperature range**: -55°C to +175°C
- **Technology**: Trench technology
- **Input capacitance (Ciss)**: 3200 pF (typ.)
- **Reverse recovery time (Trr)**: 140 ns
Domain and module applications:
1. **Power management**: The low on-resistance and high current capability of the IRFZ44RSTRR-VB make it an excellent performer in power management systems, especially for DC-DC converters and switching power modules. It can provide reliable energy conversion, reduce power consumption and improve system efficiency in high-efficiency power adapters and server power systems.
2. **Motor control**: This MOSFET is ideal for motor drive applications. Its high current carrying capacity and low on-resistance make it an ideal choice for industrial motor drives, home appliance motor control and automation systems, providing stable and efficient motor control performance.
3. **Consumer electronics**: In consumer electronics such as smart home devices and portable electronics, the IRFZ44RSTRR-VB can be used for battery management and power switching. Its efficient energy control capabilities can improve the operating efficiency and endurance of the device and optimize the user experience.
4. **Automotive Electronics**: Due to its high temperature resistance and high current handling capability, the IRFZ44RSTRR-VB is suitable for use in automotive electronic systems such as battery management systems, electric vehicle drive modules, and lighting control systems. It can provide reliable current control and efficient energy conversion to ensure system stability and performance.
With its excellent performance and wide applicability, the IRFZ44RSTRR-VB has shown significant application value in multiple fields, especially in efficient power management and motor control systems.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image