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IRFZ44RSTRR-VB Product details

Product introduction:

IRFZ44RSTRR-VB MOSFET Product Introduction

The IRFZ44RSTRR-VB is a high-performance N-channel MOSFET in a TO-263 package. This MOSFET is designed for high-efficiency energy switching applications and has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. It uses advanced trench technology to provide low on-resistance of 35mΩ and 32mΩ (at VGS of 4.5V and 10V), respectively, which can maintain low power consumption under high current conditions. The gate threshold voltage (Vth) of the IRFZ44RSTRR-VB is 1.7V, which gives it good switching response characteristics and is suitable for a variety of high-efficiency power management and switching control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 1.7V 50A 32mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 1.7V 50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 1.7V 50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
IRFZ44RSTRR-VB Detailed parameter description

- **Package type**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 50A
- **Power dissipation**: 94W (max)
- **Operating temperature range**: -55°C to +175°C
- **Technology**: Trench technology
- **Input capacitance (Ciss)**: 3200 pF (typ.)
- **Reverse recovery time (Trr)**: 140 ns

Domain and module applications:

Application examples of applicable fields and modules

1. **Power management**: The low on-resistance and high current capability of the IRFZ44RSTRR-VB make it an excellent performer in power management systems, especially for DC-DC converters and switching power modules. It can provide reliable energy conversion, reduce power consumption and improve system efficiency in high-efficiency power adapters and server power systems.

2. **Motor control**: This MOSFET is ideal for motor drive applications. Its high current carrying capacity and low on-resistance make it an ideal choice for industrial motor drives, home appliance motor control and automation systems, providing stable and efficient motor control performance.

3. **Consumer electronics**: In consumer electronics such as smart home devices and portable electronics, the IRFZ44RSTRR-VB can be used for battery management and power switching. Its efficient energy control capabilities can improve the operating efficiency and endurance of the device and optimize the user experience.

4. **Automotive Electronics**: Due to its high temperature resistance and high current handling capability, the IRFZ44RSTRR-VB is suitable for use in automotive electronic systems such as battery management systems, electric vehicle drive modules, and lighting control systems. It can provide reliable current control and efficient energy conversion to ensure system stability and performance.

With its excellent performance and wide applicability, the IRFZ44RSTRR-VB has shown significant application value in multiple fields, especially in efficient power management and motor control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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