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IRFZ34STRPBF-VB Product details

Product introduction:

IRFZ34STRPBF-VB MOSFET Product Introduction

**IRFZ34STRPBF-VB** is an N-channel MOSFET based on Trench technology, packaged in TO-263, designed for high-efficiency power switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, and the gate-source voltage (VGS) is rated at ±20V, providing reliable power switching performance. Its threshold voltage (Vth) is 1.7V, ensuring a lower gate drive voltage. The RDS(ON) of this MOSFET is 35mΩ (VGS=4.5V) and 32mΩ (VGS=10V), respectively, and supports a maximum continuous drain current (ID) of 50A, ensuring low conduction losses in high current applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 1.7V 50A 32mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 1.7V 50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 1.7V 50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
IRFZ34STRPBF-VB Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **Drain current (ID)**: 50A
- **RDS(ON) (on-resistance)**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Technology**: Trench
- **Junction-to-case thermal resistance (RθJC)**: <1.5°C/W
- **Operating temperature range**: -55°C to 175°C

Domain and module applications:

Application Examples of IRFZ34STRPBF-VB

**IRFZ34STRPBF-VB** MOSFET is widely used in various scenarios requiring efficient switching and power management due to its high current handling capability and low on-resistance. Here are some typical application examples:

1. **Power Management and DC-DC Converters**: IRFZ34STRPBF-VB is well suited for use in switching regulators such as buck and boost converters in power management systems. Its low RDS(ON) enables it to have lower energy losses during high power conversion, making it suitable for efficient power adapters and power conversion modules.

2. **Motor Drive and Industrial Applications**: Due to its high drain current capability of 50A, this MOSFET excels in driving medium to high power motors. It is widely used in industrial robots, motor control systems, and automation equipment to provide reliable current drive and control.

3. **Battery Management System (BMS)**: In battery protection and energy management applications, the IRFZ34STRPBF-VB can handle high currents and ensure efficient battery charging and discharging. It is suitable for battery management circuits in electric vehicles (EVs) and energy storage systems to provide stable switching control.

4. **Consumer Electronics and Home Appliances**: In consumer electronics and home appliances that require high current switching, such as power tools and appliances, the IRFZ34STRPBF-VB can effectively provide switching functions to ensure efficient operation and reliability of the equipment.

These application examples show the wide range of uses of the IRFZ34STRPBF-VB MOSFET in power control, high-power switching, and energy management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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