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IRFZ34NLPBF-VB Product details
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Product Introduction
**IRFZ34NLPBF-VB** is a high-performance N-Channel MOSFET in a TO262 package and manufactured using Trench technology. This MOSFET is designed to handle high current and high-efficiency switching applications, with a wide gate-source voltage range and very low on-resistance. Its excellent current handling capability and excellent switching performance make it suitable for electronic applications requiring high performance and high reliability.
**IRFZ34NLPBF-VB** is a high-performance N-Channel MOSFET in a TO262 package and manufactured using Trench technology. This MOSFET is designed to handle high current and high-efficiency switching applications, with a wide gate-source voltage range and very low on-resistance. Its excellent current handling capability and excellent switching performance make it suitable for electronic applications requiring high performance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package**: TO262
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 3mΩ @ VGS = 10V
- **Drain current (ID)**: 210A
- **Technology**: Trench
- **Package**: TO262
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 3mΩ @ VGS = 10V
- **Drain current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
**1. High-power switching power supply**
IRFZ34NLPBF-VB is suitable for high-power switching power supply systems, such as high-power DC-DC converters and AC-DC adapters. Its high current handling capability and low on-resistance enable it to efficiently convert power, improve system efficiency, and reduce heat generation and energy loss.
**2. Electric vehicles and battery management systems**
In electric vehicles and battery management systems, this MOSFET can be used as a battery switch and power regulation element. Its high current carrying capacity and low conduction loss help improve battery charging and discharging efficiency and ensure system stability and reliability.
**3. Motor control and drive**
In motor control systems, IRFZ34NLPBF-VB can be used as a switching element for motor drive. Its ability to handle large currents and low on-resistance ensures smooth operation of the motor under different load conditions and reduces system power consumption and heat generation.
**4. High-power amplifier**
This MOSFET is also suitable for high-power amplifier circuits, such as audio amplifiers and RF amplifiers. Its low on-resistance and high current capability can effectively improve the performance and efficiency of the amplifier, making it suitable for high-power applications.
These application scenarios fully demonstrate the high-performance characteristics of IRFZ34NLPBF-VB, making it an ideal choice for a variety of high-power and high-efficiency electronic devices.
**1. High-power switching power supply**
IRFZ34NLPBF-VB is suitable for high-power switching power supply systems, such as high-power DC-DC converters and AC-DC adapters. Its high current handling capability and low on-resistance enable it to efficiently convert power, improve system efficiency, and reduce heat generation and energy loss.
**2. Electric vehicles and battery management systems**
In electric vehicles and battery management systems, this MOSFET can be used as a battery switch and power regulation element. Its high current carrying capacity and low conduction loss help improve battery charging and discharging efficiency and ensure system stability and reliability.
**3. Motor control and drive**
In motor control systems, IRFZ34NLPBF-VB can be used as a switching element for motor drive. Its ability to handle large currents and low on-resistance ensures smooth operation of the motor under different load conditions and reduces system power consumption and heat generation.
**4. High-power amplifier**
This MOSFET is also suitable for high-power amplifier circuits, such as audio amplifiers and RF amplifiers. Its low on-resistance and high current capability can effectively improve the performance and efficiency of the amplifier, making it suitable for high-power applications.
These application scenarios fully demonstrate the high-performance characteristics of IRFZ34NLPBF-VB, making it an ideal choice for a variety of high-power and high-efficiency electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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