IRFZ24VS-VB Product details
Product introduction:
IRFZ24VS-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high-efficiency applications. Its main features include ultra-low on-resistance (RDS(ON)=35mΩ@VGS=4.5V and 32mΩ@VGS=10V), which enables it to perform well under high current (up to 50A) and high voltage (60V) conditions. Based on Trench process technology, this MOSFET provides excellent performance and stability in the fields of power management and current switching. IRFZ24VS-VB is particularly suitable for systems that require high efficiency and low power consumption, providing reliable switching and regulation functions for various electronic devices.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Drain current (ID)**: 50A
- **Technology**: Trench
- **Power consumption**: Typical power consumption is low, the specific value depends on the heat dissipation conditions
- **Input capacitance (Ciss)**: About 1500pF, providing faster switching speed
- **Switching speed**: Suitable for fast switching operations
- **Operating temperature**: -55°C to +175°C
- **Breakdown voltage**: 60V
Domain and module applications:
1. **Power management**
In high-efficiency DC-DC converters and switching power supplies (SMPS), IRFZ24VS-VB is widely used to improve power conversion efficiency and reduce energy loss due to its low on-resistance and high current handling capability. It is suitable for power modules of various consumer electronic products, such as computer power supplies and battery management systems.
2. **Motor drive**
This MOSFET is suitable for medium and high power motor control systems, such as brushless DC motor drivers and stepper motor drivers. Its high current carrying capacity and low on-resistance enable it to effectively reduce heat and power consumption and improve motor efficiency.
3. **Automotive electronics**
The applications of IRFZ24VS-VB in the automotive electronics field include power switches, lighting controls, and electronic control units (ECUs). Its high temperature resistance and high current capability make it suitable for various high-load applications in automotive environments.
4. **Solar Inverter**
In solar inverter systems, this MOSFET can efficiently handle high currents from solar panels, convert DC to AC, and improve the overall efficiency and stability of the system.
5. **LED Lighting**
IRFZ24VS-VB is suitable for LED drive circuits, controlling the current of LEDs through efficient switches, providing stable light output while reducing energy loss and heat generation.
With its excellent electrical characteristics and wide applicability, IRFZ24VS-VB is an ideal choice for many high-performance electronic systems and is suitable for a variety of application scenarios requiring high current and low power consumption.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image