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IRFW630BTM-VB Product details
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IRFW630BTM-VB MOSFET Product Introduction
**IRFW630BTM-VB** is a high-performance N-Channel MOSFET in TO263 package. It has a drain-source withstand voltage (VDS) of 200V and a maximum drain current (ID) of up to 10A. This MOSFET adopts advanced Trench technology and has a lower on-state resistance (RDS(ON)), which is suitable for high-voltage and high-current switching applications. IRFW630BTM-VB is mainly used in scenarios that require high voltage withstand and high current handling, such as power management, motor control, and inverters.
**IRFW630BTM-VB** is a high-performance N-Channel MOSFET in TO263 package. It has a drain-source withstand voltage (VDS) of 200V and a maximum drain current (ID) of up to 10A. This MOSFET adopts advanced Trench technology and has a lower on-state resistance (RDS(ON)), which is suitable for high-voltage and high-current switching applications. IRFW630BTM-VB is mainly used in scenarios that require high voltage withstand and high current handling, such as power management, motor control, and inverters.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | 300mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IRFW630BTM-VB MOSFET Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-source withstand voltage (VDS)**: 200V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-state resistance (RDS(ON))**:
- 300mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-source withstand voltage (VDS)**: 200V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-state resistance (RDS(ON))**:
- 300mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **High voltage power management**:
- IRFW630BTM-VB is suitable for high voltage power management systems and works stably in a high voltage environment of 200V. Its low RDS(ON) allows to reduce energy loss and improve the overall efficiency of the system. It is used in power converters, power distribution systems and industrial power supplies.
2. **Motor drive control**:
- This MOSFET can be used for motor drive control. It can handle high voltage and high current and is suitable for motor control systems for industrial motors, power tools and electric vehicles. Its high withstand voltage and stable performance ensure the reliability and efficiency of motor drive.
3. **Inverter**:
- In inverter applications, the high withstand voltage characteristics and low RDS(ON) of IRFW630BTM-VB can improve the efficiency of the inverter. It is suitable for solar inverters and UPS (uninterruptible power supply) systems to convert DC power into AC power and provide stable power output.
4. **Switching Power Supply**:
- This MOSFET can be used in switching power supply design, especially in situations where high voltage and high current are required. Its low power loss characteristics are suitable for high-efficiency switching power supplies, improving power conversion efficiency, and are widely used in computer power supplies, communication equipment power supplies and other fields.
5. **Battery Management System**:
- IRFW630BTM-VB is also suitable for battery management systems, which can effectively control the charging and discharging process of the battery. Its high voltage tolerance and low on-state resistance ensure the safety and efficiency of the battery system, and are suitable for electric vehicles, battery packs and power protection systems.
As a high-voltage, high-current N-Channel MOSFET, IRFW630BTM-VB's excellent switching performance and high efficiency enable it to perform well in high voltage and high current applications.
1. **High voltage power management**:
- IRFW630BTM-VB is suitable for high voltage power management systems and works stably in a high voltage environment of 200V. Its low RDS(ON) allows to reduce energy loss and improve the overall efficiency of the system. It is used in power converters, power distribution systems and industrial power supplies.
2. **Motor drive control**:
- This MOSFET can be used for motor drive control. It can handle high voltage and high current and is suitable for motor control systems for industrial motors, power tools and electric vehicles. Its high withstand voltage and stable performance ensure the reliability and efficiency of motor drive.
3. **Inverter**:
- In inverter applications, the high withstand voltage characteristics and low RDS(ON) of IRFW630BTM-VB can improve the efficiency of the inverter. It is suitable for solar inverters and UPS (uninterruptible power supply) systems to convert DC power into AC power and provide stable power output.
4. **Switching Power Supply**:
- This MOSFET can be used in switching power supply design, especially in situations where high voltage and high current are required. Its low power loss characteristics are suitable for high-efficiency switching power supplies, improving power conversion efficiency, and are widely used in computer power supplies, communication equipment power supplies and other fields.
5. **Battery Management System**:
- IRFW630BTM-VB is also suitable for battery management systems, which can effectively control the charging and discharging process of the battery. Its high voltage tolerance and low on-state resistance ensure the safety and efficiency of the battery system, and are suitable for electric vehicles, battery packs and power protection systems.
As a high-voltage, high-current N-Channel MOSFET, IRFW630BTM-VB's excellent switching performance and high efficiency enable it to perform well in high voltage and high current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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