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IRFW530ATM-VB Product details
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Product Introduction
**IRFW530ATM-VB** is a high-performance single N-channel MOSFET in TO263 package. It is designed for high voltage and high power applications, with high withstand voltage, low on-resistance and high current carrying capacity. This MOSFET uses Trench technology to achieve excellent switching performance and low conduction loss, which is very suitable for various power switching and power management applications. The characteristics of IRFW530ATM-VB enable it to perform well in electronic devices that need to handle higher voltages and currents, providing stable and reliable performance.
**IRFW530ATM-VB** is a high-performance single N-channel MOSFET in TO263 package. It is designed for high voltage and high power applications, with high withstand voltage, low on-resistance and high current carrying capacity. This MOSFET uses Trench technology to achieve excellent switching performance and low conduction loss, which is very suitable for various power switching and power management applications. The characteristics of IRFW530ATM-VB enable it to perform well in electronic devices that need to handle higher voltages and currents, providing stable and reliable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: IRFW530ATM-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench technology
- **Model**: IRFW530ATM-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench technology
Domain and module applications：
Applications and Modules
1. **High Power Switch**:
- The high voltage and high current capabilities of the IRFW530ATM-VB make it ideal for high power switching applications. In power conversion and power management modules, it can handle higher voltage and current switching tasks, helping to achieve efficient power transmission and control.
2. **Power Management System**:
- The low on-resistance and high current handling capability of the IRFW530ATM-VB make it an ideal choice in DC-DC converters, power adapters, and power supplies. It can provide efficient power conversion while reducing power consumption and heat, improving the energy efficiency of the overall system.
3. **Motor Drive**:
- This MOSFET is suitable for motor drive applications such as DC motor controllers and stepper motor drivers. It can stably handle the current in the motor drive and ensure efficient operation, reducing energy consumption and heat, and improving the performance of the motor system.
4. **Load Switch**:
- IRFW530ATM-VB is also widely used in load switch circuits. Its high current capability and low on-resistance enable it to effectively control and switch large loads, suitable for switching applications in various electronic devices, ensuring reliable load management.
1. **High Power Switch**:
- The high voltage and high current capabilities of the IRFW530ATM-VB make it ideal for high power switching applications. In power conversion and power management modules, it can handle higher voltage and current switching tasks, helping to achieve efficient power transmission and control.
2. **Power Management System**:
- The low on-resistance and high current handling capability of the IRFW530ATM-VB make it an ideal choice in DC-DC converters, power adapters, and power supplies. It can provide efficient power conversion while reducing power consumption and heat, improving the energy efficiency of the overall system.
3. **Motor Drive**:
- This MOSFET is suitable for motor drive applications such as DC motor controllers and stepper motor drivers. It can stably handle the current in the motor drive and ensure efficient operation, reducing energy consumption and heat, and improving the performance of the motor system.
4. **Load Switch**:
- IRFW530ATM-VB is also widely used in load switch circuits. Its high current capability and low on-resistance enable it to effectively control and switch large loads, suitable for switching applications in various electronic devices, ensuring reliable load management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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